The 71V632 3.3V CMOS SRAM is organized as 64K x 32. The pipelined burst architecture provides cost-effective 3-1-1-1 secondary cache performance for processors up to 117MHz. The 71V632 SRAM contains write, data, address, and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM .
SRAM - Synchronous, SDR Memory IC 2Mbit Parallel 66 MHz 7 ns 100-TQFP (14x14)
IC SRAM 2MBIT PARALLEL 100TQFP
| Integrated Device Technology | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 71V632S7PFGI | 71V632S7PFGI | 71V632S7PFGI |
| Product Name | 3.3V 64K x 32 Synchronous PipeLined Burst SRAM | Memory | Integrated Circuits (ICs) - Memory |
| Memory Category | SRAM Chip | SRAM; SRAM Chip | Volatile; SRAM Chip |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) |
| Density | 2048 kbits | 2000 kbits | 2000 kbits |
| Number of Words | 64 k | ||
| Address Bus Width | 32 bits |
