Integrated Device Technology 3.3V 64K x 32 Synchronous PipeLined Burst SRAM 71V632S7PFGI

Description
The 71V632 3.3V CMOS SRAM is organized as 64K x 32. The pipelined burst architecture provides cost-effective 3-1-1-1 secondary cache performance for processors up to 117MHz. The 71V632 SRAM contains write, data, address, and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM .
Datasheet
Description
The 71V632 3.3V CMOS SRAM is organized as 64K x 32. The pipelined burst architecture provides cost-effective 3-1-1-1 secondary cache performance for processors up to 117MHz. The 71V632 SRAM contains write, data, address, and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM .
Datasheet

Suppliers

Company
Product
Description
Supplier Links
3.3V 64K x 32 Synchronous PipeLined Burst SRAM - 71V632S7PFGI - Integrated Device Technology
San Jose, CA, USA
3.3V 64K x 32 Synchronous PipeLined Burst SRAM
71V632S7PFGI
3.3V 64K x 32 Synchronous PipeLined Burst SRAM 71V632S7PFGI
The 71V632 3.3V CMOS SRAM is organized as 64K x 32. The pipelined burst architecture provides cost-effective 3-1-1-1 secondary cache performance for processors up to 117MHz. The 71V632 SRAM contains write, data, address, and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM .

The 71V632 3.3V CMOS SRAM is organized as 64K x 32. The pipelined burst architecture provides cost-effective 3-1-1-1 secondary cache performance for processors up to 117MHz. The 71V632 SRAM contains write, data, address, and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM .

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - 71V632S7PFGI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
71V632S7PFGI
Integrated Circuits (ICs) - Memory 71V632S7PFGI
IC SRAM 2MBIT PARALLEL 100TQFP

IC SRAM 2MBIT PARALLEL 100TQFP

Supplier's Site
Memory - 71V632S7PFGI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR Memory IC 2Mbit Parallel 66 MHz 7 ns 100-TQFP (14x14)

SRAM - Synchronous, SDR Memory IC 2Mbit Parallel 66 MHz 7 ns 100-TQFP (14x14)

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Technical Specifications

  Integrated Device Technology Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number 71V632S7PFGI 71V632S7PFGI 71V632S7PFGI
Product Name 3.3V 64K x 32 Synchronous PipeLined Burst SRAM Integrated Circuits (ICs) - Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 2048 kbits 2000 kbits 2000 kbits
Number of Words 64 k
Address Bus Width 32 bits
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