Integrated Device Technology 3.3V 128K x 36 ZBT Synchronous Flow-Through SRAM 71V547S80PFG

Description
The 71V547 3.3V CMOS SRAM is organized as 128K x 36 bits. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turn-around. The 71V547 contains address, data-in and control signal registers. The outputs are flow-through (no output data register). In the burst mode, it can provide four cycles of data for a single address presented to the SRAM .
Datasheet
Description
The 71V547 3.3V CMOS SRAM is organized as 128K x 36 bits. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turn-around. The 71V547 contains address, data-in and control signal registers. The outputs are flow-through (no output data register). In the burst mode, it can provide four cycles of data for a single address presented to the SRAM .
Datasheet

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3.3V 128K x 36 ZBT Synchronous Flow-Through SRAM - 71V547S80PFG - Integrated Device Technology
San Jose, CA, USA
3.3V 128K x 36 ZBT Synchronous Flow-Through SRAM
71V547S80PFG
3.3V 128K x 36 ZBT Synchronous Flow-Through SRAM 71V547S80PFG
The 71V547 3.3V CMOS SRAM is organized as 128K x 36 bits. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turn-around. The 71V547 contains address, data-in and control signal registers. The outputs are flow-through (no output data register). In the burst mode, it can provide four cycles of data for a single address presented to the SRAM .

The 71V547 3.3V CMOS SRAM is organized as 128K x 36 bits. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turn-around. The 71V547 contains address, data-in and control signal registers. The outputs are flow-through (no output data register). In the burst mode, it can provide four cycles of data for a single address presented to the SRAM .

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - 71V547S80PFG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
71V547S80PFG
Integrated Circuits (ICs) - Memory - Memory 71V547S80PFG
IC SRAM 4.5MBIT PARALLEL 100TQFP

IC SRAM 4.5MBIT PARALLEL 100TQFP

Supplier's Site
Memory - 71V547S80PFG - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mbit Parallel 8 ns 100-TQFP (14x14)

SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mbit Parallel 8 ns 100-TQFP (14x14)

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Technical Specifications

  Integrated Device Technology Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number 71V547S80PFG 71V547S80PFG 71V547S80PFG
Product Name 3.3V 128K x 36 ZBT Synchronous Flow-Through SRAM Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Cycle Time 80 ns
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 128 kbits 4500 kbits 4500 kbits
Number of Words 128 k
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