Integrated Device Technology 3.3V 128K x 36 ZBT Synchronous PipeLined SRAM 71V546S133PFGI

Description
The 71V546 3.3V CMOS SRAM is organized as 128K x 36 bits. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turn-around. The 71V546 contains data I/O, address and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM .
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Description
The 71V546 3.3V CMOS SRAM is organized as 128K x 36 bits. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turn-around. The 71V546 contains data I/O, address and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM .
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3.3V 128K x 36 ZBT Synchronous PipeLined SRAM - 71V546S133PFGI - Integrated Device Technology
San Jose, CA, USA
3.3V 128K x 36 ZBT Synchronous PipeLined SRAM
71V546S133PFGI
3.3V 128K x 36 ZBT Synchronous PipeLined SRAM 71V546S133PFGI
The 71V546 3.3V CMOS SRAM is organized as 128K x 36 bits. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turn-around. The 71V546 contains data I/O, address and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM .

The 71V546 3.3V CMOS SRAM is organized as 128K x 36 bits. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turn-around. The 71V546 contains data I/O, address and control signal registers. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM .

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - 1039969-71V546S133PFGI - Win Source Electronics
Laguna Hills, CA, United States
Integrated Circuits (ICs) - Memory
1039969-71V546S133PFGI
Integrated Circuits (ICs) - Memory 1039969-71V546S133PFGI
Win Source Part Number: 1039969-71V546S133PF GI Category: Integrated Circuits (ICs)>Memory Package: Bulk Standard Package: 1 Mounting: SMD (SMT) Technology: SRAM - Synchronous, SDR (ZBT) Memory Type: Volatile Memory Size: 4.5Mb (128K x 36) Access Time: 4.2 ns Voltage - Supply: 3.135V ~ 3.465V Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14) Temperature Range - Operating: -40°C ~ 85°C (TA) Memory Format: SRAM Clock Frequency: 133 MHz Memory Interface: Parallel Alternative Parts (Cross-Reference): 71V3556S133PFG; 71V2556S133PFG; 71V3556S133PFGI; ECCN: 3A991B2A Fake Threat In the Open Market: 76 pct. HTSUS: 8542.32.0041 Mfr: IDT, Integrated Device Technology Inc Other Names: 2156-71V546S133PFGI, IDTIDT71V546S133PFGI

Win Source Part Number: 1039969-71V546S133PFGI
Category: Integrated Circuits (ICs)>Memory
Package: Bulk
Standard Package: 1
Mounting: SMD (SMT)
Technology: SRAM - Synchronous, SDR (ZBT)
Memory Type: Volatile
Memory Size: 4.5Mb (128K x 36)
Access Time: 4.2 ns
Voltage - Supply: 3.135V ~ 3.465V
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)
Temperature Range - Operating: -40°C ~ 85°C (TA)
Memory Format: SRAM
Clock Frequency: 133 MHz
Memory Interface: Parallel
Alternative Parts (Cross-Reference): 71V3556S133PFG; 71V2556S133PFG; 71V3556S133PFGI;
ECCN: 3A991B2A
Fake Threat In the Open Market: 76 pct.
HTSUS: 8542.32.0041
Mfr: IDT, Integrated Device Technology Inc
Other Names: 2156-71V546S133PFGI,IDTIDT71V546S133PFGI

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Integrated Circuits (ICs) - Memory - 71V546S133PFGI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
71V546S133PFGI
Integrated Circuits (ICs) - Memory 71V546S133PFGI
IC SRAM 4.5MBIT PARALLEL 100TQFP

IC SRAM 4.5MBIT PARALLEL 100TQFP

Supplier's Site
Memory - 71V546S133PFGI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mbit Parallel 133 MHz 4.2 ns 100-TQFP (14x14)

SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mbit Parallel 133 MHz 4.2 ns 100-TQFP (14x14)

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Technical Specifications

  Integrated Device Technology Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 71V546S133PFGI 1039969-71V546S133PFGI 71V546S133PFGI 71V546S133PFGI
Product Name 3.3V 128K x 36 ZBT Synchronous PipeLined SRAM Integrated Circuits (ICs) - Memory Integrated Circuits (ICs) - Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Data Rate 133 MHz 133 MHz
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 128 kbits 4500 kbits 4500 kbits
Number of Words 128 k
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