Integrated Device Technology 3.3V 512K x 8 Asynchronous Static RAM Center Pwr & Gnd Pinout 71V424S10YG8

Description
The 71V424 3.3V CMOS SRAM is organized as 512K x 8. All bidirectional inputs and outputs of the 71V424 are TTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.
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Description
The 71V424 3.3V CMOS SRAM is organized as 512K x 8. All bidirectional inputs and outputs of the 71V424 are TTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.
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Suppliers

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Product
Description
Supplier Links
3.3V 512K x 8 Asynchronous Static RAM Center Pwr & Gnd Pinout - 71V424S10YG8 - Integrated Device Technology
San Jose, CA, USA
3.3V 512K x 8 Asynchronous Static RAM Center Pwr & Gnd Pinout
71V424S10YG8
3.3V 512K x 8 Asynchronous Static RAM Center Pwr & Gnd Pinout 71V424S10YG8
The 71V424 3.3V CMOS SRAM is organized as 512K x 8. All bidirectional inputs and outputs of the 71V424 are TTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.

The 71V424 3.3V CMOS SRAM is organized as 512K x 8. All bidirectional inputs and outputs of the 71V424 are TTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.

Supplier's Site Datasheet
Memory - SRAM - 71V424S10YG8 - 776594-71V424S10YG8 - Win Source Electronics
Laguna Hills, CA, United States
Memory - SRAM - 71V424S10YG8
776594-71V424S10YG8
Memory - SRAM - 71V424S10YG8 776594-71V424S10YG8
Manufacturer: IDT, Integrated Device Technology Inc Win Source Part Number: 776594-71V424S10YG8 Packaging: Reel package Operating Temperature Range: 0°C ~ 70°C (TA) Package: 36-BSOJ (0.400", 10.16mm Width) Mounting: SMD Technology: SRAM - Asynchronous Operating Supply Voltage: 3 V ~ 3.6 V Memory Type: Volatile Memory Size: 4Mb (512K x 8) Access Time: 10ns Family Name: 71V424S Categories: Integrated Circuits (ICs) Memory Format: SRAM Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Manufacturer Package: 36-SOJ Alternative Parts (Cross-Reference): CY7C1049BV33L-15VC; CY7C1049BNV33-15VC; CY7C1049BNV33-15VXC; CY7C1049BNV33-15VCT; Introduction Date: August 13, 1999 ECCN: EAR99 Country of Origin: Taiwan Estimated EOL Date: 2029 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Limited

Manufacturer: IDT, Integrated Device Technology Inc
Win Source Part Number: 776594-71V424S10YG8
Packaging: Reel package
Operating Temperature Range: 0°C ~ 70°C (TA)
Package: 36-BSOJ (0.400", 10.16mm Width)
Mounting: SMD
Technology: SRAM - Asynchronous
Operating Supply Voltage: 3 V ~ 3.6 V
Memory Type: Volatile
Memory Size: 4Mb (512K x 8)
Access Time: 10ns
Family Name: 71V424S
Categories: Integrated Circuits (ICs)
Memory Format: SRAM
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Manufacturer Package: 36-SOJ
Alternative Parts (Cross-Reference): CY7C1049BV33L-15VC; CY7C1049BNV33-15VC; CY7C1049BNV33-15VXC; CY7C1049BNV33-15VCT;
Introduction Date: August 13, 1999
ECCN: EAR99
Country of Origin: Taiwan
Estimated EOL Date: 2029
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Memory IC - 135066864 - Radwell International
Willingboro, NJ, United States
Memory IC
135066864
Memory IC 135066864
(PRICE/TC) SRAM, 4MBIT, 0 TO 70DEG C, ROHS COMPLIANT. FREE 2 YEAR RADWELL WARRANTY

(PRICE/TC) SRAM, 4MBIT, 0 TO 70DEG C, ROHS COMPLIANT. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  Integrated Device Technology Win Source Electronics Radwell International
Product Category Memory Chips Memory Chips Memory Chips
Product Number 71V424S10YG8 776594-71V424S10YG8 135066864
Product Name 3.3V 512K x 8 Asynchronous Static RAM Center Pwr & Gnd Pinout Memory - SRAM - 71V424S10YG8 Memory IC
Memory Category SRAM Chip Volatile; SRAM Chip SRAM Chip
Access Time 10 ns 10 ns
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 4096 kbits
Number of Words 512 k
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