Integrated Device Technology 3.3V 512K x 8 Asynchronous Static RAM Center Pwr & Gnd Pinout 71V424L10YG

Description
The 71V424 3.3V CMOS SRAM is organized as 512K x 8. All bidirectional inputs and outputs of the 71V424 are TTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.
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Description
The 71V424 3.3V CMOS SRAM is organized as 512K x 8. All bidirectional inputs and outputs of the 71V424 are TTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.
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Datasheet
Datasheet Summary
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The IDT71V424L10YG is a 4 Megabit (512K x 8-bit) high-speed CMOS Static RAM designed for applications requiring fast memory access. It operates with a single 3.3V power supply and features access times as low as 10ns, making it suitable for high-performance systems. The device utilizes fully static asynchronous circuitry, eliminating the need for clocks or refresh cycles, which simplifies integration into various designs. This memory chip includes an output enable pin and supports TTL-compatible bidirectional data inputs and outputs. It is available in two package types: a 36-pin, 400 mil Plastic SOJ and a 44-pin, 400 mil TSOP, providing flexibility for different application requirements. The IDT71V424L10YG is characterized by low power consumption, particularly in standby mode, which can be advantageous for battery-operated devices. Engineers considering this product should note its commercial and industrial temperature ranges, ensuring reliability in diverse operating conditions. The device's specifications make it a viable option for projects that demand efficient and fast memory solutions.

Datasheet Summary
Powered by GS/AI

The IDT71V424L10YG is a 4 Megabit (512K x 8-bit) high-speed CMOS Static RAM designed for applications requiring fast memory access. It operates with a single 3.3V power supply and features access times as low as 10ns, making it suitable for high-performance systems. The device utilizes fully static asynchronous circuitry, eliminating the need for clocks or refresh cycles, which simplifies integration into various designs. This memory chip includes an output enable pin and supports TTL-compatible bidirectional data inputs and outputs. It is available in two package types: a 36-pin, 400 mil Plastic SOJ and a 44-pin, 400 mil TSOP, providing flexibility for different application requirements. The IDT71V424L10YG is characterized by low power consumption, particularly in standby mode, which can be advantageous for battery-operated devices. Engineers considering this product should note its commercial and industrial temperature ranges, ensuring reliability in diverse operating conditions. The device's specifications make it a viable option for projects that demand efficient and fast memory solutions.

Suppliers

Company
Product
Description
Supplier Links
3.3V 512K x 8 Asynchronous Static RAM Center Pwr & Gnd Pinout - 71V424L10YG - Integrated Device Technology
San Jose, CA, USA
3.3V 512K x 8 Asynchronous Static RAM Center Pwr & Gnd Pinout
71V424L10YG
3.3V 512K x 8 Asynchronous Static RAM Center Pwr & Gnd Pinout 71V424L10YG
The 71V424 3.3V CMOS SRAM is organized as 512K x 8. All bidirectional inputs and outputs of the 71V424 are TTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.

The 71V424 3.3V CMOS SRAM is organized as 512K x 8. All bidirectional inputs and outputs of the 71V424 are TTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.

Supplier's Site Datasheet
 - 71V424L10YG - Rochester Electronics
Newburyport, MA, United States
Standard SRAM, 512KX8, 10ns, CMOS, PDSO36

Standard SRAM, 512KX8, 10ns, CMOS, PDSO36

Supplier's Site Datasheet
Memory - 71V424L10YG - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 36-SOJ

SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 36-SOJ

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - 71V424L10YG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
71V424L10YG
Integrated Circuits (ICs) - Memory 71V424L10YG
IC SRAM 4MBIT PARALLEL 36SOJ

IC SRAM 4MBIT PARALLEL 36SOJ

Supplier's Site

Technical Specifications

  Integrated Device Technology Rochester Electronics Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 71V424L10YG 71V424L10YG 71V424L10YG 71V424L10YG
Product Name 3.3V 512K x 8 Asynchronous Static RAM Center Pwr & Gnd Pinout Memory Integrated Circuits (ICs) - Memory
Memory Category SRAM Chip SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Access Time 10 ns 10 ns 10 ns
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 4096 kbits 4000 kbits 4000 kbits
Number of Words 512 k
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