Integrated Device Technology Memory 71V416VS12BEG

Description
SRAM - Asynchronous Memory IC 4Mbit Parallel 12 ns 48-CABGA (9x9)
  • Memory - 71V416VS12BEG - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
Datasheet
Description
SRAM - Asynchronous Memory IC 4Mbit Parallel 12 ns 48-CABGA (9x9)
Datasheet

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Memory - 71V416VS12BEG - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
71V416VS12BEG
Memory 71V416VS12BEG
SRAM - Asynchronous Memory IC 4Mbit Parallel 12 ns 48-CABGA (9x9)

SRAM - Asynchronous Memory IC 4Mbit Parallel 12 ns 48-CABGA (9x9)

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Technical Specifications

  Quarktwin Technology Ltd.
Product Category Memory Chips
Product Number 71V416VS12BEG
Product Name Memory
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Operating Temperature 0 to 70 C (32 to 158 F)
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