Integrated Device Technology 3.3V 256K x 16 Asynchronous Static RAM Center Pwr & Gnd Pinout 71V416S15YG

Description
The 71V416 3.3V CMOS SRAM is organized as 256K x 16. All bidirectional inputs and outputs of the 71V416 are LVTTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.
Request a Quote
Description
The 71V416 3.3V CMOS SRAM is organized as 256K x 16. All bidirectional inputs and outputs of the 71V416 are LVTTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The 71V416S15YG is a 4Mbit (256K x 16) high-speed CMOS Static RAM from Quarktwin Technology Ltd. It features access and cycle times of 15ns, making it suitable for applications requiring fast memory access. The device operates on a single 3.3V power supply and is designed with a JEDEC center power/GND pinout to minimize noise. It includes one chip select and one output enable pin, along with bidirectional data inputs and outputs that are LVTTL-compatible. This memory chip is available in multiple package types, including a 44-pin, 400 mil plastic SOJ package, a 44-pin, 400 mil TSOP Type II package, and a 48-ball grid array package measuring 9mm x 9mm. The 71V416S15YG is suitable for both commercial and industrial temperature ranges, operating from 0¬8C to 70¬8C and -40¬8C to 85¬8C, respectively. The device's low power consumption during chip deselect enhances its efficiency in various applications.

Datasheet Summary
Powered by GS/AI

The 71V416S15YG is a 4Mbit (256K x 16) high-speed CMOS Static RAM from Quarktwin Technology Ltd. It features access and cycle times of 15ns, making it suitable for applications requiring fast memory access. The device operates on a single 3.3V power supply and is designed with a JEDEC center power/GND pinout to minimize noise. It includes one chip select and one output enable pin, along with bidirectional data inputs and outputs that are LVTTL-compatible. This memory chip is available in multiple package types, including a 44-pin, 400 mil plastic SOJ package, a 44-pin, 400 mil TSOP Type II package, and a 48-ball grid array package measuring 9mm x 9mm. The 71V416S15YG is suitable for both commercial and industrial temperature ranges, operating from 0¬8C to 70¬8C and -40¬8C to 85¬8C, respectively. The device's low power consumption during chip deselect enhances its efficiency in various applications.

Suppliers

Company
Product
Description
Supplier Links
3.3V 256K x 16 Asynchronous Static RAM Center Pwr & Gnd Pinout - 71V416S15YG - Integrated Device Technology
San Jose, CA, USA
3.3V 256K x 16 Asynchronous Static RAM Center Pwr & Gnd Pinout
71V416S15YG
3.3V 256K x 16 Asynchronous Static RAM Center Pwr & Gnd Pinout 71V416S15YG
The 71V416 3.3V CMOS SRAM is organized as 256K x 16. All bidirectional inputs and outputs of the 71V416 are LVTTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.

The 71V416 3.3V CMOS SRAM is organized as 256K x 16. All bidirectional inputs and outputs of the 71V416 are LVTTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.

Supplier's Site Datasheet
 - 71V416S15YG - Rochester Electronics
Newburyport, MA, United States
Standard SRAM, 256KX16, 15ns, CMOS, PDSO44

Standard SRAM, 256KX16, 15ns, CMOS, PDSO44

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - 71V416S15YG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
71V416S15YG
Integrated Circuits (ICs) - Memory - Memory 71V416S15YG
IC SRAM 4MBIT PARALLEL 44SOJ

IC SRAM 4MBIT PARALLEL 44SOJ

Supplier's Site
Memory - 71V416S15YG - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 4Mbit Parallel 15 ns 44-SOJ

SRAM - Asynchronous Memory IC 4Mbit Parallel 15 ns 44-SOJ

Buy Now Datasheet

Technical Specifications

  Integrated Device Technology Rochester Electronics Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 71V416S15YG 71V416S15YG 71V416S15YG 71V416S15YG
Product Name 3.3V 256K x 16 Asynchronous Static RAM Center Pwr & Gnd Pinout Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category SRAM Chip SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Access Time 15 ns 15 ns
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 4096 kbits 4000 kbits 4000 kbits
Number of Words 256 k
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 71V016SA10PH - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 10 ns
Density 1000 kbits
View Details
Memory - AS8FLC1M32A - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category FLASH
Access Time 70 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 309977-128 01 - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers
SN74ACT3632 512 x 36 x 2 bidirectional synchronous FIFO memory - SN74ACT3632-15PQG4 - Texas Instruments
Specs
Memory Category FIFO
Package Type BQFP
View Details
5 suppliers