Integrated Device Technology 3.3V 256K x 16 Asynchronous Static RAM Center Pwr & Gnd Pinout 71V416S10PHG8

Description
The 71V416 3.3V CMOS SRAM is organized as 256K x 16. All bidirectional inputs and outputs of the 71V416 are LVTTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.
Request a Quote Datasheet
Description
The 71V416 3.3V CMOS SRAM is organized as 256K x 16. All bidirectional inputs and outputs of the 71V416 are LVTTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
3.3V 256K x 16 Asynchronous Static RAM Center Pwr & Gnd Pinout - 71V416S10PHG8 - Integrated Device Technology
San Jose, CA, USA
3.3V 256K x 16 Asynchronous Static RAM Center Pwr & Gnd Pinout
71V416S10PHG8
3.3V 256K x 16 Asynchronous Static RAM Center Pwr & Gnd Pinout 71V416S10PHG8
The 71V416 3.3V CMOS SRAM is organized as 256K x 16. All bidirectional inputs and outputs of the 71V416 are LVTTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.

The 71V416 3.3V CMOS SRAM is organized as 256K x 16. All bidirectional inputs and outputs of the 71V416 are LVTTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used, requiring no clocks or refresh for operation.

Supplier's Site Datasheet
Memory - RAM - 71V416S10PHG8 - 1129731-71V416S10PHG8 - Win Source Electronics
Laguna Hills, CA, United States
Memory - RAM - 71V416S10PHG8
1129731-71V416S10PHG8
Memory - RAM - 71V416S10PHG8 1129731-71V416S10PHG8
Manufacturer: IDT, Integrated Device Technology Inc Win Source Part Number: 1129731-71V416S10PHG 8 Packaging: Reel - TR Operating Temperature Range: 0°C ~ 70°C (TA) Package: 44-TSOP (0.400", 10.16mm Width) Mounting: SMD Technology: SRAM - Asynchronous Operating Supply Voltage: 3 V ~ 3.6 V Memory Type: Volatile Memory Size: 4Mb (256K x 16) Access Time: 10ns Family Name: 71V416S Categories: Integrated Circuits (ICs) Memory Format: SRAM Manufacturer Homepage: www.idt.com Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Manufacturer Package: 44-TSOP II Alternative Parts (Cross-Reference): PDM31564-SA12TTY; PDM31564-SA12T; PDM31564-SA12TTR; Introduction Date: August 05, 1999 ECCN: EAR99 Country of Origin: Taiwan Estimated EOL Date: 2026 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 30 pct. Supply and Demand Status: Limited

Manufacturer: IDT, Integrated Device Technology Inc
Win Source Part Number: 1129731-71V416S10PHG8
Packaging: Reel - TR
Operating Temperature Range: 0°C ~ 70°C (TA)
Package: 44-TSOP (0.400", 10.16mm Width)
Mounting: SMD
Technology: SRAM - Asynchronous
Operating Supply Voltage: 3 V ~ 3.6 V
Memory Type: Volatile
Memory Size: 4Mb (256K x 16)
Access Time: 10ns
Family Name: 71V416S
Categories: Integrated Circuits (ICs)
Memory Format: SRAM
Manufacturer Homepage: www.idt.com
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Manufacturer Package: 44-TSOP II
Alternative Parts (Cross-Reference): PDM31564-SA12TTY; PDM31564-SA12T; PDM31564-SA12TTR;
Introduction Date: August 05, 1999
ECCN: EAR99
Country of Origin: Taiwan
Estimated EOL Date: 2026
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 30 pct.
Supply and Demand Status: Limited

Buy Now Datasheet

Technical Specifications

  Integrated Device Technology Win Source Electronics
Product Category Memory Chips Memory Chips
Product Number 71V416S10PHG8 1129731-71V416S10PHG8
Product Name 3.3V 256K x 16 Asynchronous Static RAM Center Pwr & Gnd Pinout Memory - RAM - 71V416S10PHG8
Memory Category SRAM Chip Volatile; SRAM Chip
Access Time 10 ns 10 ns
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 4096 kbits
Number of Words 256 k
Unlock Full Specs
to access all available technical data

Similar Products

Memory - CY14V104NA-BA25XI - ODG (Origin Data Global)
Infineon Technologies AG
Specs
Memory Category NVSRAM (Non-Volatile SRAM); SRAM Chip
Access Time 25 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
View Details
3 suppliers
Flash Memory - 1882864P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Density 1024000 kbits
Package Type WSON
View Details
Memory - JBP28S42MJ - ODG (Origin Data Global)
Texas Instruments
Specs
Memory Category PROM; PROM
Access Time 70 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
3 suppliers
Memory - 24C04AE/P - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Access Time 3500 ns
Density 4 kbits
View Details