Integrated Device Technology Memory 71V3579SA75BQG

Description
256K X 18 3.3V Synchronous SRAM 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect
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Description
256K X 18 3.3V Synchronous SRAM 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - 71V3579SA75BQG - Rochester Electronics
Newburyport, MA, United States
256K X 18 3.3V Synchronous SRAM 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect

256K X 18 3.3V Synchronous SRAM 3.3V I/O, Flow-Through Outputs Burst Counter, Single Cycle Deselect

Supplier's Site Datasheet
Memory - 71V3579SA75BQG - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 7.5 ns 165-CABGA (13x15)

SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 7.5 ns 165-CABGA (13x15)

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Technical Specifications

  Rochester Electronics Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number 71V3579SA75BQG 71V3579SA75BQG
Product Name Memory
Memory Category SRAM Chip SRAM; SRAM Chip
Package Type BGA; BGA165 BGA; 165-TBGA
Access Time 7.5 ns
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