Integrated Device Technology 3.3V 128K x 36 Synchronous PipeLined Burst SRAM w/3.3V I/O 71V35761SA166BGGI

Description
The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM .
Datasheet
Description
The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM .
Datasheet

Suppliers

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Description
Supplier Links
3.3V 128K x 36 Synchronous PipeLined Burst SRAM w/3.3V I/O - 71V35761SA166BGGI - Integrated Device Technology
San Jose, CA, USA
3.3V 128K x 36 Synchronous PipeLined Burst SRAM w/3.3V I/O
71V35761SA166BGGI
3.3V 128K x 36 Synchronous PipeLined Burst SRAM w/3.3V I/O 71V35761SA166BGGI
The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM .

The 71V35761 3.3V CMOS SRAM is organized as 128K x 36. It contains write, data, address and control registers. The burst mode feature offers the highest level of performance to the system designer, as the 71V35761 can provide four cycles of data for a single address presented to the SRAM .

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - 71V35761SA166BGGI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
71V35761SA166BGGI
Integrated Circuits (ICs) - Memory 71V35761SA166BGGI
IC SRAM 4.5MBIT PARALLEL 119PBGA

IC SRAM 4.5MBIT PARALLEL 119PBGA

Supplier's Site
Memory - 71V35761SA166BGGI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 166 MHz 3.5 ns 119-PBGA (14x22)

SRAM - Synchronous, SDR Memory IC 4.5Mbit Parallel 166 MHz 3.5 ns 119-PBGA (14x22)

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Technical Specifications

  Integrated Device Technology Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number 71V35761SA166BGGI 71V35761SA166BGGI 71V35761SA166BGGI
Product Name 3.3V 128K x 36 Synchronous PipeLined Burst SRAM w/3.3V I/O Integrated Circuits (ICs) - Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Data Rate 166 MHz 166 MHz
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 4608 kbits 4500 kbits 4500 kbits
Number of Words 128 k
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4 suppliers