Integrated Device Technology 3.3V 256K x 18 ZBT Synchronous Flow-Through SRAM w/3.3V I/O 71V3559S80BQI

Description
The 71V3559 3.3V CMOS Synchronous SRAM is organized as 256K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V3559 contains address, data-in and control signal registers. The outputs are flow-through (no output data register).
Datasheet
Description
The 71V3559 3.3V CMOS Synchronous SRAM is organized as 256K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V3559 contains address, data-in and control signal registers. The outputs are flow-through (no output data register).
Datasheet

Suppliers

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Product
Description
Supplier Links
3.3V 256K x 18 ZBT Synchronous Flow-Through SRAM w/3.3V I/O - 71V3559S80BQI - Integrated Device Technology
San Jose, CA, USA
3.3V 256K x 18 ZBT Synchronous Flow-Through SRAM w/3.3V I/O
71V3559S80BQI
3.3V 256K x 18 ZBT Synchronous Flow-Through SRAM w/3.3V I/O 71V3559S80BQI
The 71V3559 3.3V CMOS Synchronous SRAM is organized as 256K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V3559 contains address, data-in and control signal registers. The outputs are flow-through (no output data register).

The 71V3559 3.3V CMOS Synchronous SRAM is organized as 256K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V3559 contains address, data-in and control signal registers. The outputs are flow-through (no output data register).

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - 71V3559S80BQI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
71V3559S80BQI
Integrated Circuits (ICs) - Memory - Memory 71V3559S80BQI
IC SRAM 4.5MBIT PAR 165CABGA

IC SRAM 4.5MBIT PAR 165CABGA

Supplier's Site
Memory - 71V3559S80BQI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mbit Parallel 8 ns 165-CABGA (13x15)

SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mbit Parallel 8 ns 165-CABGA (13x15)

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Technical Specifications

  Integrated Device Technology Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number 71V3559S80BQI 71V3559S80BQI 71V3559S80BQI
Product Name 3.3V 256K x 18 ZBT Synchronous Flow-Through SRAM w/3.3V I/O Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Cycle Time 80 ns 8 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 256 kbits 4500 kbits 4500 kbits
Number of Words 256 k
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