Integrated Device Technology 3.3V 256K x 18 ZBT Synchronous Flow-Through SRAM w/3.3V I/O 71V3559S80BQI

Description
The 71V3559 3.3V CMOS Synchronous SRAM is organized as 256K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V3559 contains address, data-in and control signal registers. The outputs are flow-through (no output data register).
Datasheet
Description
The 71V3559 3.3V CMOS Synchronous SRAM is organized as 256K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V3559 contains address, data-in and control signal registers. The outputs are flow-through (no output data register).
Datasheet

Suppliers

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Product
Description
Supplier Links
3.3V 256K x 18 ZBT Synchronous Flow-Through SRAM w/3.3V I/O - 71V3559S80BQI - Integrated Device Technology
San Jose, CA, USA
3.3V 256K x 18 ZBT Synchronous Flow-Through SRAM w/3.3V I/O
71V3559S80BQI
3.3V 256K x 18 ZBT Synchronous Flow-Through SRAM w/3.3V I/O 71V3559S80BQI
The 71V3559 3.3V CMOS Synchronous SRAM is organized as 256K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V3559 contains address, data-in and control signal registers. The outputs are flow-through (no output data register).

The 71V3559 3.3V CMOS Synchronous SRAM is organized as 256K x 18. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V3559 contains address, data-in and control signal registers. The outputs are flow-through (no output data register).

Supplier's Site Datasheet
Memory - 71V3559S80BQI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mbit Parallel 8 ns 165-CABGA (13x15)

SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mbit Parallel 8 ns 165-CABGA (13x15)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - 71V3559S80BQI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
71V3559S80BQI
Integrated Circuits (ICs) - Memory - Memory 71V3559S80BQI
IC SRAM 4.5MBIT PAR 165CABGA

IC SRAM 4.5MBIT PAR 165CABGA

Supplier's Site

Technical Specifications

  Integrated Device Technology Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number 71V3559S80BQI 71V3559S80BQI 71V3559S80BQI
Product Name 3.3V 256K x 18 ZBT Synchronous Flow-Through SRAM w/3.3V I/O Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Cycle Time 80 ns 8 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 256 kbits 4500 kbits 4500 kbits
Number of Words 256 k
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