Integrated Device Technology 3.3V 128Kx36 ZBT Synchronous Flow-Through SRAM with 3.3V I/O 71V3557S85PFGI

Description
The 71V3557 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V3557 contains address, data-in and control signal registers. The outputs are flow-through (no output data register).
Datasheet
Description
The 71V3557 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V3557 contains address, data-in and control signal registers. The outputs are flow-through (no output data register).
Datasheet

Suppliers

Company
Product
Description
Supplier Links
3.3V 128Kx36 ZBT Synchronous Flow-Through SRAM with 3.3V I/O - 71V3557S85PFGI - Integrated Device Technology
San Jose, CA, USA
3.3V 128Kx36 ZBT Synchronous Flow-Through SRAM with 3.3V I/O
71V3557S85PFGI
3.3V 128Kx36 ZBT Synchronous Flow-Through SRAM with 3.3V I/O 71V3557S85PFGI
The 71V3557 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V3557 contains address, data-in and control signal registers. The outputs are flow-through (no output data register).

The 71V3557 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V3557 contains address, data-in and control signal registers. The outputs are flow-through (no output data register).

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - 71V3557S85PFGI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
71V3557S85PFGI
Integrated Circuits (ICs) - Memory - Memory 71V3557S85PFGI
IC SRAM 4.5MBIT PARALLEL 100TQFP

IC SRAM 4.5MBIT PARALLEL 100TQFP

Supplier's Site
Memory - 71V3557S85PFGI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mbit Parallel 8.5 ns 100-TQFP (14x14)

SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mbit Parallel 8.5 ns 100-TQFP (14x14)

Buy Now Datasheet

Technical Specifications

  Integrated Device Technology Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number 71V3557S85PFGI 71V3557S85PFGI 71V3557S85PFGI
Product Name 3.3V 128Kx36 ZBT Synchronous Flow-Through SRAM with 3.3V I/O Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Cycle Time 85 ns 8.5 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 128 kbits 4500 kbits 4500 kbits
Number of Words 128 k
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 5962-8961413QXA - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EPROM; EPROM
Access Time 70 ns
Density 1000 kbits
View Details
Memory - 323017-32WS 02 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers
5V Memory IC and Storage Component - 774-MT5C1008F45L/883C - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category SRAM Chip
Operating Temperature -40 C (-40 F)
Density 1000 kbits
View Details
2 suppliers