Integrated Device Technology 3.3V 128Kx36 ZBT Synchronous Flow-Through SRAM with 3.3V I/O 71V3557S80PFGI

Description
The 71V3557 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V3557 contains address, data-in and control signal registers. The outputs are flow-through (no output data register).
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Description
The 71V3557 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V3557 contains address, data-in and control signal registers. The outputs are flow-through (no output data register).
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Suppliers

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Product
Description
Supplier Links
3.3V 128Kx36 ZBT Synchronous Flow-Through SRAM with 3.3V I/O - 71V3557S80PFGI - Integrated Device Technology
San Jose, CA, USA
3.3V 128Kx36 ZBT Synchronous Flow-Through SRAM with 3.3V I/O
71V3557S80PFGI
3.3V 128Kx36 ZBT Synchronous Flow-Through SRAM with 3.3V I/O 71V3557S80PFGI
The 71V3557 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V3557 contains address, data-in and control signal registers. The outputs are flow-through (no output data register).

The 71V3557 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V3557 contains address, data-in and control signal registers. The outputs are flow-through (no output data register).

Supplier's Site Datasheet
 - 71V3557S80PFGI - Rochester Electronics
Newburyport, MA, United States
128K X 36, 256K X 18, 3.3V Synchronous ZBT SRAM

128K X 36, 256K X 18, 3.3V Synchronous ZBT SRAM

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - 1162868-71V3557S80PFGI - Win Source Electronics
Laguna Hills, CA, United States
Integrated Circuits (ICs) - Memory
1162868-71V3557S80PFGI
Integrated Circuits (ICs) - Memory 1162868-71V3557S80PFGI
Win Source Part Number: 1162868-71V3557S80PF GI Category: Integrated Circuits (ICs)>Memory Package: Bulk Standard Package: 1 Mounting: SMD (SMT) Technology: SRAM - Synchronous, SDR (ZBT) Memory Type: Volatile Memory Size: 4.5Mb (128K x 36) Access Time: 8 ns Voltage - Supply: 3.135V ~ 3.465V Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14) Temperature Range - Operating: -40°C ~ 85°C (TA) Memory Format: SRAM Memory Interface: Parallel ECCN: 3A991B2A Fake Threat In the Open Market: 64 pct. HTSUS: 8542.32.0041 Mfr: IDT, Integrated Device Technology Inc Other Names: IDTIDT71V3557S80PFGI ,2156-71V3557S80PFGI

Win Source Part Number: 1162868-71V3557S80PFGI
Category: Integrated Circuits (ICs)>Memory
Package: Bulk
Standard Package: 1
Mounting: SMD (SMT)
Technology: SRAM - Synchronous, SDR (ZBT)
Memory Type: Volatile
Memory Size: 4.5Mb (128K x 36)
Access Time: 8 ns
Voltage - Supply: 3.135V ~ 3.465V
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)
Temperature Range - Operating: -40°C ~ 85°C (TA)
Memory Format: SRAM
Memory Interface: Parallel
ECCN: 3A991B2A
Fake Threat In the Open Market: 64 pct.
HTSUS: 8542.32.0041
Mfr: IDT, Integrated Device Technology Inc
Other Names: IDTIDT71V3557S80PFGI,2156-71V3557S80PFGI

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - 71V3557S80PFGI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
71V3557S80PFGI
Integrated Circuits (ICs) - Memory - Memory 71V3557S80PFGI
IC SRAM 4.5MBIT PARALLEL 100TQFP

IC SRAM 4.5MBIT PARALLEL 100TQFP

Supplier's Site
Memory - 71V3557S80PFGI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mbit Parallel 8 ns 100-TQFP (14x14)

SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mbit Parallel 8 ns 100-TQFP (14x14)

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Technical Specifications

  Integrated Device Technology Rochester Electronics Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 71V3557S80PFGI 71V3557S80PFGI 1162868-71V3557S80PFGI 71V3557S80PFGI 71V3557S80PFGI
Product Name 3.3V 128Kx36 ZBT Synchronous Flow-Through SRAM with 3.3V I/O Integrated Circuits (ICs) - Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category SRAM Chip SRAM Chip Volatile; SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Cycle Time 80 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 128 kbits 4500 kbits 4500 kbits
Number of Words 128 k
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