Integrated Device Technology 3.3V 128Kx36 ZBT Synchronous PipeLined SRAM with 3.3V I/O 71V3556SA133BGGI

Description
The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers.
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Description
The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers.
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Suppliers

Company
Product
Description
Supplier Links
3.3V 128Kx36 ZBT Synchronous PipeLined SRAM with 3.3V I/O - 71V3556SA133BGGI - Integrated Device Technology
San Jose, CA, USA
3.3V 128Kx36 ZBT Synchronous PipeLined SRAM with 3.3V I/O
71V3556SA133BGGI
3.3V 128Kx36 ZBT Synchronous PipeLined SRAM with 3.3V I/O 71V3556SA133BGGI
The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers.

The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers.

Supplier's Site Datasheet
 - 71V3556SA133BGGI - Rochester Electronics
Newburyport, MA, United States
128K X 36 3.3V Synchronous ZBT SRAM 3.3V I/O, Burst Counter Pipelined Outputs

128K X 36 3.3V Synchronous ZBT SRAM 3.3V I/O, Burst Counter Pipelined Outputs

Supplier's Site Datasheet
Memory - 71V3556SA133BGGI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mbit Parallel 133 MHz 4.2 ns 119-PBGA (14x22)

SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mbit Parallel 133 MHz 4.2 ns 119-PBGA (14x22)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - 71V3556SA133BGGI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
71V3556SA133BGGI
Integrated Circuits (ICs) - Memory - Memory 71V3556SA133BGGI
IC SRAM 4.5MBIT PARALLEL 119PBGA

IC SRAM 4.5MBIT PARALLEL 119PBGA

Supplier's Site

Technical Specifications

  Integrated Device Technology Rochester Electronics Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 71V3556SA133BGGI 71V3556SA133BGGI 71V3556SA133BGGI 71V3556SA133BGGI
Product Name 3.3V 128Kx36 ZBT Synchronous PipeLined SRAM with 3.3V I/O Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM Chip SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Data Rate 133 MHz 133 MHz
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 4608 kbits 4500 kbits 4500 kbits
Number of Words 128 k
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