Integrated Device Technology 3.3V 128Kx36 ZBT Synchronous PipeLined SRAM with 3.3V I/O 71V3556S166PFG

Description
The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers.
Request a Quote
Description
The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers.
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The IDT71V3556S166PFG is a 3.3V synchronous SRAM featuring a 128K x 36 memory configuration, designed for high-speed applications with a maximum operating frequency of 166 MHz and a clock-to-data access time of 3.5 ns. This memory device incorporates Zero Bus Turnaround (ZBT) technology, which eliminates dead bus cycles during read and write operations, enhancing overall system performance. It includes a burst counter that allows for four cycles of data output for a single address, with the burst order selectable via the LBO pin. The device supports individual byte write control and features three chip enable pins for easy depth expansion. The IDT71V3556S166PFG is packaged in a JEDEC standard 100-pin thin quad flatpack (TQFP), making it suitable for various applications requiring efficient memory solutions. This SRAM is ideal for systems that demand high-speed data processing and minimal latency, particularly in commercial and industrial environments.

Datasheet Summary
Powered by GS/AI

The IDT71V3556S166PFG is a 3.3V synchronous SRAM featuring a 128K x 36 memory configuration, designed for high-speed applications with a maximum operating frequency of 166 MHz and a clock-to-data access time of 3.5 ns. This memory device incorporates Zero Bus Turnaround (ZBT) technology, which eliminates dead bus cycles during read and write operations, enhancing overall system performance. It includes a burst counter that allows for four cycles of data output for a single address, with the burst order selectable via the LBO pin. The device supports individual byte write control and features three chip enable pins for easy depth expansion. The IDT71V3556S166PFG is packaged in a JEDEC standard 100-pin thin quad flatpack (TQFP), making it suitable for various applications requiring efficient memory solutions. This SRAM is ideal for systems that demand high-speed data processing and minimal latency, particularly in commercial and industrial environments.

Suppliers

Company
Product
Description
Supplier Links
3.3V 128Kx36 ZBT Synchronous PipeLined SRAM with 3.3V I/O - 71V3556S166PFG - Integrated Device Technology
San Jose, CA, USA
3.3V 128Kx36 ZBT Synchronous PipeLined SRAM with 3.3V I/O
71V3556S166PFG
3.3V 128Kx36 ZBT Synchronous PipeLined SRAM with 3.3V I/O 71V3556S166PFG
The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers.

The 71V3556 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V3556 contains data I/O, address and control signal registers.

Supplier's Site Datasheet
 - 71V3556S166PFG - Rochester Electronics
Newburyport, MA, United States
128K X 36 3.3V Synchronous ZBT SRAM 3.3V I/O, Burst Counter Pipelined Outputs

128K X 36 3.3V Synchronous ZBT SRAM 3.3V I/O, Burst Counter Pipelined Outputs

Supplier's Site Datasheet
Memory - 71V3556S166PFG - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mbit Parallel 166 MHz 3.5 ns 100-TQFP (14x14)

SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mbit Parallel 166 MHz 3.5 ns 100-TQFP (14x14)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - 71V3556S166PFG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
71V3556S166PFG
Integrated Circuits (ICs) - Memory - Memory 71V3556S166PFG
IC SRAM 4.5MBIT PARALLEL 100TQFP

IC SRAM 4.5MBIT PARALLEL 100TQFP

Supplier's Site

Technical Specifications

  Integrated Device Technology Rochester Electronics Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 71V3556S166PFG 71V3556S166PFG 71V3556S166PFG 71V3556S166PFG
Product Name 3.3V 128Kx36 ZBT Synchronous PipeLined SRAM with 3.3V I/O Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM Chip SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Data Rate 166 MHz 166 MHz
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 4608 kbits 4500 kbits 4500 kbits
Number of Words 128 k
Unlock Full Specs
to access all available technical data

Similar Products

SDRAM - 1882632P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 5 ns
Density 2048000 kbits
View Details
Memory - 71T75602S100PFG - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 5 ns
Density 18000 kbits
View Details
Memory - JM38510/23104BFA - Quarktwin Technology Ltd.
View Details
2 suppliers
Memory - MT42C4256 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category NVRAM; VRAM
Access Time 100 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details