Integrated Device Technology Memory 71V3556S133BQ

Description
128K X 36 3.3V Synchronous ZBT SRAM 3.3V I/O, Burst Counter Pipelined Outputs
Request a Quote Datasheet
Description
128K X 36 3.3V Synchronous ZBT SRAM 3.3V I/O, Burst Counter Pipelined Outputs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - 71V3556S133BQ - Rochester Electronics
Newburyport, MA, United States
128K X 36 3.3V Synchronous ZBT SRAM 3.3V I/O, Burst Counter Pipelined Outputs

128K X 36 3.3V Synchronous ZBT SRAM 3.3V I/O, Burst Counter Pipelined Outputs

Supplier's Site Datasheet
Memory - 71V3556S133BQ - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mbit Parallel 133 MHz 4.2 ns 165-CABGA (13x15)

SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mbit Parallel 133 MHz 4.2 ns 165-CABGA (13x15)

Buy Now Datasheet

Technical Specifications

  Rochester Electronics Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number 71V3556S133BQ 71V3556S133BQ
Product Name Memory
Memory Category SRAM Chip SRAM; SRAM Chip
Package Type BGA; BGA165 BGA; 165-TBGA
Access Time 4.2 ns
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 448-CY14B108N-ZSP45XI-ND - DigiKey
Infineon Technologies AG
Specs
Memory Category NVRAM; NVSRAM
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 8000 kbits
View Details
5 suppliers
Memory - SRAM - 71256SA20PZI - 857054-71256SA20PZI - Win Source Electronics
Specs
Memory Category SRAM Chip
View Details
2 suppliers
Flash Memory - 1882745 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Number of Words 512 k
Bits per Word 8 bits
View Details