Integrated Device Technology Memory 71V3556S133BQ

Description
128K X 36 3.3V Synchronous ZBT SRAM 3.3V I/O, Burst Counter Pipelined Outputs
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Description
128K X 36 3.3V Synchronous ZBT SRAM 3.3V I/O, Burst Counter Pipelined Outputs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - 71V3556S133BQ - Rochester Electronics
Newburyport, MA, United States
128K X 36 3.3V Synchronous ZBT SRAM 3.3V I/O, Burst Counter Pipelined Outputs

128K X 36 3.3V Synchronous ZBT SRAM 3.3V I/O, Burst Counter Pipelined Outputs

Supplier's Site Datasheet
Memory - 71V3556S133BQ - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mbit Parallel 133 MHz 4.2 ns 165-CABGA (13x15)

SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mbit Parallel 133 MHz 4.2 ns 165-CABGA (13x15)

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Technical Specifications

  Rochester Electronics Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number 71V3556S133BQ 71V3556S133BQ
Product Name Memory
Memory Category SRAM Chip SRAM; SRAM Chip
Package Type BGA; BGA165 BGA; 165-TBGA
Access Time 4.2 ns
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