The 71V256SA 3.3V CMOS Asynchronous SRAM is organized as 32K x 8. When in standby mode, its very low power characteristics contribute to extended battery life. Under full standby mode ( CS at CMOS level, f=0), power consumption is guaranteed to be less than 6.6mW. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.
SRAM - Asynchronous Memory IC 256Kbit Parallel 20 ns 28-TSOP
IC SRAM 256KBIT PARALLEL 28TSOP
| Integrated Device Technology | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 71V256SA20PZG | 71V256SA20PZG | 71V256SA20PZG |
| Product Name | 3.3V, 32K X 8 Asynchronous Static RAM | Memory | Integrated Circuits (ICs) - Memory |
| Memory Category | SRAM Chip | SRAM; SRAM Chip | Volatile; SRAM Chip |
| Access Time | 20 ns | 20 ns | 20 ns |
| Operating Temperature | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) |
| Density | 256 kbits | 256 kbits | 256 kbits |
| Number of Words | 32 k |
