Integrated Device Technology Memory 71V256SA10PZG

Description
SRAM - Asynchronous Memory IC 256Kbit Parallel 10 ns 28-TSOP
Description
SRAM - Asynchronous Memory IC 256Kbit Parallel 10 ns 28-TSOP
Datasheet
Datasheet Summary
Powered by GS/AI

The IDT71V256SA10PZG is a 256K (32K x 8-bit) high-speed static RAM designed for applications requiring fast access times and low power consumption. It operates with a single 3.3V (¬±0.3V) power supply and is available in both commercial (0¬8C to +70¬8C) and industrial (,Äì40¬8C to +85¬8C) temperature ranges. The device features access times of 10ns, making it suitable for high-performance processor secondary cache applications. This SRAM is packaged in a compact 28-pin 300 mil SOJ or TSOP Type I, allowing for space-efficient layouts. It has a low standby current of 2mA in full standby mode, contributing to extended battery life in portable applications. The inputs and outputs are LVTTL-compatible, ensuring compatibility with modern digital systems. Overall, the IDT71V256SA10PZG is a reliable choice for engineers seeking a fast and efficient memory solution for their projects.

Datasheet Summary
Powered by GS/AI

The IDT71V256SA10PZG is a 256K (32K x 8-bit) high-speed static RAM designed for applications requiring fast access times and low power consumption. It operates with a single 3.3V (¬±0.3V) power supply and is available in both commercial (0¬8C to +70¬8C) and industrial (,Äì40¬8C to +85¬8C) temperature ranges. The device features access times of 10ns, making it suitable for high-performance processor secondary cache applications. This SRAM is packaged in a compact 28-pin 300 mil SOJ or TSOP Type I, allowing for space-efficient layouts. It has a low standby current of 2mA in full standby mode, contributing to extended battery life in portable applications. The inputs and outputs are LVTTL-compatible, ensuring compatibility with modern digital systems. Overall, the IDT71V256SA10PZG is a reliable choice for engineers seeking a fast and efficient memory solution for their projects.

Suppliers

Company
Product
Description
Supplier Links
Memory - 71V256SA10PZG - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 256Kbit Parallel 10 ns 28-TSOP

SRAM - Asynchronous Memory IC 256Kbit Parallel 10 ns 28-TSOP

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - 71V256SA10PZG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
71V256SA10PZG
Integrated Circuits (ICs) - Memory 71V256SA10PZG
IC SRAM 256KBIT PARALLEL 28TSOP

IC SRAM 256KBIT PARALLEL 28TSOP

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips
Product Number 71V256SA10PZG 71V256SA10PZG
Product Name Memory Integrated Circuits (ICs) - Memory
Memory Category SRAM; SRAM Chip Volatile; SRAM Chip
Access Time 10 ns 10 ns
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS29F040 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category FLASH
Access Time 55 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 71V2576S150PFI - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 3.8 ns
Density 4500 kbits
View Details
Flash Memory - 1712220 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Pins 8
Supply Voltage 3.6 v, 2.7 v
View Details