Integrated Device Technology 3.3V 128Kx36 ZBT Synchronous PipeLined SRAM with 2.5V I/O 71V2546S100PFG

Description
The 71V2546 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V2546 has an on-chip burst counter. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM .
Datasheet
Description
The 71V2546 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V2546 has an on-chip burst counter. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM .
Datasheet

Suppliers

Company
Product
Description
Supplier Links
3.3V 128Kx36 ZBT Synchronous PipeLined SRAM with 2.5V I/O - 71V2546S100PFG - Integrated Device Technology
San Jose, CA, USA
3.3V 128Kx36 ZBT Synchronous PipeLined SRAM with 2.5V I/O
71V2546S100PFG
3.3V 128Kx36 ZBT Synchronous PipeLined SRAM with 2.5V I/O 71V2546S100PFG
The 71V2546 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V2546 has an on-chip burst counter. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM .

The 71V2546 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71V2546 has an on-chip burst counter. In the burst mode, it can provide four cycles of data for a single address presented to the SRAM .

Supplier's Site Datasheet
Memory - 71V2546S100PFG - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mbit Parallel 100 MHz 5 ns 100-TQFP (14x14)

SRAM - Synchronous, SDR (ZBT) Memory IC 4.5Mbit Parallel 100 MHz 5 ns 100-TQFP (14x14)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - 71V2546S100PFG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
71V2546S100PFG
Integrated Circuits (ICs) - Memory - Memory 71V2546S100PFG
IC SRAM 4.5MBIT PARALLEL 100TQFP

IC SRAM 4.5MBIT PARALLEL 100TQFP

Supplier's Site

Technical Specifications

  Integrated Device Technology Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number 71V2546S100PFG 71V2546S100PFG 71V2546S100PFG
Product Name 3.3V 128Kx36 ZBT Synchronous PipeLined SRAM with 2.5V I/O Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Data Rate 100 MHz 100 MHz
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 4608 kbits 4500 kbits 4500 kbits
Number of Words 128 k
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882679P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Density 128000 kbits
Package Type WSON
View Details
Memory - AS4SD8M16 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SDRAM; DRAM Chip
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 64000 kbits
View Details
Memory - 520966231076 - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers