Integrated Device Technology 3.3V 128K x 8 Asynchronous Static RAM Center Power & Ground Pinout 71V124SA15TYGI8

Description
The 71V124 3.3V CMOS SRAM is organized as 128K x 8. The JEDEC center power/ GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71V124 are LVTTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.
Datasheet
Description
The 71V124 3.3V CMOS SRAM is organized as 128K x 8. The JEDEC center power/ GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71V124 are LVTTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.
Datasheet

Suppliers

Company
Product
Description
Supplier Links
3.3V 128K x 8 Asynchronous Static RAM Center Power & Ground Pinout - 71V124SA15TYGI8 - Integrated Device Technology
San Jose, CA, USA
3.3V 128K x 8 Asynchronous Static RAM Center Power & Ground Pinout
71V124SA15TYGI8
3.3V 128K x 8 Asynchronous Static RAM Center Power & Ground Pinout 71V124SA15TYGI8
The 71V124 3.3V CMOS SRAM is organized as 128K x 8. The JEDEC center power/ GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71V124 are LVTTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.

The 71V124 3.3V CMOS SRAM is organized as 128K x 8. The JEDEC center power/ GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71V124 are LVTTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.

Supplier's Site Datasheet

Technical Specifications

  Integrated Device Technology
Product Category Memory Chips
Product Number 71V124SA15TYGI8
Product Name 3.3V 128K x 8 Asynchronous Static RAM Center Power & Ground Pinout
Memory Category SRAM Chip
Access Time 15 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 1024 kbits
Number of Words 128 k
Unlock Full Specs
to access all available technical data

Similar Products

Memory IC and Storage Component - 774-93425DMQB30 - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category Volatile; SRAM Chip
Access Time 30 ns
Cycle Time 20 ns
View Details
4 suppliers
Flash Memory - 1882785 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Bits per Word 8 bits
View Details