Integrated Device Technology 3.3V 128K x 8 Asynchronous Static RAM Center Power & Ground Pinout 71V124SA12YGI

Description
The 71V124 3.3V CMOS SRAM is organized as 128K x 8. The JEDEC center power/ GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71V124 are LVTTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.
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Description
The 71V124 3.3V CMOS SRAM is organized as 128K x 8. The JEDEC center power/ GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71V124 are LVTTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.
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Suppliers

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Product
Description
Supplier Links
3.3V 128K x 8 Asynchronous Static RAM Center Power & Ground Pinout - 71V124SA12YGI - Integrated Device Technology
San Jose, CA, USA
3.3V 128K x 8 Asynchronous Static RAM Center Power & Ground Pinout
71V124SA12YGI
3.3V 128K x 8 Asynchronous Static RAM Center Power & Ground Pinout 71V124SA12YGI
The 71V124 3.3V CMOS SRAM is organized as 128K x 8. The JEDEC center power/ GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71V124 are LVTTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.

The 71V124 3.3V CMOS SRAM is organized as 128K x 8. The JEDEC center power/ GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71V124 are LVTTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.

Supplier's Site Datasheet
Memory - SRAM - 71V124SA12YGI - 717287-71V124SA12YGI - Win Source Electronics
Laguna Hills, CA, United States
Memory - SRAM - 71V124SA12YGI
717287-71V124SA12YGI
Memory - SRAM - 71V124SA12YGI 717287-71V124SA12YGI
Manufacturer: IDT, Integrated Device Technology Inc Win Source Part Number: 717287-71V124SA12YGI Packaging: Tube Mounting Style: SMD Technology: SRAM - Asynchronous Memory Type: Volatile Memory Size: 1Mb (128K x 8) Access Time: 12ns Categories: Integrated Circuits Supplier Device Package: 32-SOJ Temperature Range - Operating: -40°C ~ 85°C Memory Format: SRAM Write Cycle Time - Word, Page: 12ns Memory Interface: Parallel Manufacturer Package: 32-BSOJ Popularity: Low Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Limited Family Part Number: IDT71V124 Manufacturer Pack Quantity: 23 MSL Level: 3 (168 Hours) Supply Voltage (V): 3V ~ 3.6V

Manufacturer: IDT, Integrated Device Technology Inc
Win Source Part Number: 717287-71V124SA12YGI
Packaging: Tube
Mounting Style: SMD
Technology: SRAM - Asynchronous
Memory Type: Volatile
Memory Size: 1Mb (128K x 8)
Access Time: 12ns
Categories: Integrated Circuits
Supplier Device Package: 32-SOJ
Temperature Range - Operating: -40°C ~ 85°C
Memory Format: SRAM
Write Cycle Time - Word, Page: 12ns
Memory Interface: Parallel
Manufacturer Package: 32-BSOJ
Popularity: Low
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Limited
Family Part Number: IDT71V124
Manufacturer Pack Quantity: 23
MSL Level: 3 (168 Hours)
Supply Voltage (V): 3V ~ 3.6V

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Technical Specifications

  Integrated Device Technology Win Source Electronics
Product Category Memory Chips Memory Chips
Product Number 71V124SA12YGI 717287-71V124SA12YGI
Product Name 3.3V 128K x 8 Asynchronous Static RAM Center Power & Ground Pinout Memory - SRAM - 71V124SA12YGI
Memory Category SRAM Chip Volatile; SRAM Chip
Access Time 12 ns 12 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 1024 kbits
Number of Words 128 k
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