Integrated Device Technology 3.3V 128K x 8 Asynchronous Static RAM Center Power & Ground Pinout 71V124SA10PHGI8

Description
The 71V124 3.3V CMOS SRAM is organized as 128K x 8. The JEDEC center power/ GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71V124 are LVTTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.
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Description
The 71V124 3.3V CMOS SRAM is organized as 128K x 8. The JEDEC center power/ GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71V124 are LVTTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.
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3.3V 128K x 8 Asynchronous Static RAM Center Power & Ground Pinout - 71V124SA10PHGI8 - Integrated Device Technology
San Jose, CA, USA
3.3V 128K x 8 Asynchronous Static RAM Center Power & Ground Pinout
71V124SA10PHGI8
3.3V 128K x 8 Asynchronous Static RAM Center Power & Ground Pinout 71V124SA10PHGI8
The 71V124 3.3V CMOS SRAM is organized as 128K x 8. The JEDEC center power/ GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71V124 are LVTTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.

The 71V124 3.3V CMOS SRAM is organized as 128K x 8. The JEDEC center power/ GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71V124 are LVTTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.

Supplier's Site Datasheet
Memory - SRAM - 71V124SA10PHGI8 - 764701-71V124SA10PHGI8 - Win Source Electronics
Laguna Hills, CA, United States
Memory - SRAM - 71V124SA10PHGI8
764701-71V124SA10PHGI8
Memory - SRAM - 71V124SA10PHGI8 764701-71V124SA10PHGI8
Manufacturer: IDT, Integrated Device Technology Inc Win Source Part Number: 764701-71V124SA10PHG I8 Packaging: Reel package Operating Temperature Range: -40°C ~ 85°C (TA) Package: 32-SOIC (0.400", 10.16mm Width) Mounting: SMD Technology: SRAM - Asynchronous Operating Supply Voltage: 3.15 V ~ 3.6 V Memory Type: Volatile Memory Size: 1Mb (128K x 8) Access Time: 10ns Family Name: 71V124SA Categories: Integrated Circuits (ICs) Memory Format: SRAM Write Cycle Time - Word, Page: 10ns Memory Interface: Parallel Manufacturer Package: 32-TSOP II Alternative Parts (Cross-Reference): IS63LV1024-10TI-TR; IS63LV1024L-10T; IS63LV1024-10TT; Introduction Date: November 22, 1999 ECCN: EAR99 Country of Origin: Taiwan Estimated EOL Date: 2028 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited

Manufacturer: IDT, Integrated Device Technology Inc
Win Source Part Number: 764701-71V124SA10PHGI8
Packaging: Reel package
Operating Temperature Range: -40°C ~ 85°C (TA)
Package: 32-SOIC (0.400", 10.16mm Width)
Mounting: SMD
Technology: SRAM - Asynchronous
Operating Supply Voltage: 3.15 V ~ 3.6 V
Memory Type: Volatile
Memory Size: 1Mb (128K x 8)
Access Time: 10ns
Family Name: 71V124SA
Categories: Integrated Circuits (ICs)
Memory Format: SRAM
Write Cycle Time - Word, Page: 10ns
Memory Interface: Parallel
Manufacturer Package: 32-TSOP II
Alternative Parts (Cross-Reference): IS63LV1024-10TI-TR; IS63LV1024L-10T; IS63LV1024-10TT;
Introduction Date: November 22, 1999
ECCN: EAR99
Country of Origin: Taiwan
Estimated EOL Date: 2028
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Integrated Device Technology Win Source Electronics
Product Category Memory Chips Memory Chips
Product Number 71V124SA10PHGI8 764701-71V124SA10PHGI8
Product Name 3.3V 128K x 8 Asynchronous Static RAM Center Power & Ground Pinout Memory - SRAM - 71V124SA10PHGI8
Memory Category SRAM Chip Volatile; SRAM Chip
Access Time 10 ns 10 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 1024 kbits
Number of Words 128 k
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