Integrated Device Technology 3.3V 128K x 8 Asynchronous Static RAM Center Power & Ground Pinout 71V124SA10PHG8

Description
The 71V124 3.3V CMOS SRAM is organized as 128K x 8. The JEDEC center power/ GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71V124 are LVTTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.
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Description
The 71V124 3.3V CMOS SRAM is organized as 128K x 8. The JEDEC center power/ GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71V124 are LVTTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.
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3.3V 128K x 8 Asynchronous Static RAM Center Power & Ground Pinout - 71V124SA10PHG8 - Integrated Device Technology
San Jose, CA, USA
3.3V 128K x 8 Asynchronous Static RAM Center Power & Ground Pinout
71V124SA10PHG8
3.3V 128K x 8 Asynchronous Static RAM Center Power & Ground Pinout 71V124SA10PHG8
The 71V124 3.3V CMOS SRAM is organized as 128K x 8. The JEDEC center power/ GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71V124 are LVTTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.

The 71V124 3.3V CMOS SRAM is organized as 128K x 8. The JEDEC center power/ GND pinout reduces noise generation and improves system performance. All bidirectional inputs and outputs of the 71V124 are LVTTL -compatible and operation is from a single 3.3V supply. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation.

Supplier's Site Datasheet
Memory - SRAM - 71V124SA10PHG8 - 122012-71V124SA10PHG8 - Win Source Electronics
Laguna Hills, CA, United States
Memory - SRAM - 71V124SA10PHG8
122012-71V124SA10PHG8
Memory - SRAM - 71V124SA10PHG8 122012-71V124SA10PHG8
Manufacturer: IDT, Integrated Device Technology Inc Win Source Part Number: 122012-71V124SA10PHG 8 Packaging: Reel - TR Mounting: SMD (SMT) Technology: SRAM - Asynchronous Memory Type: Volatile Memory Size: 1Mb (128K x 8) Access Time: 10ns Categories: Integrated Circuits Status: Active Temperature Range - Operating: 0°C to 70°C (TA) Case / Package: 32-TSOP II Supply Voltage - Operating: 3.15 V to 3.6 V Memory Format: SRAM Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Balance

Manufacturer: IDT, Integrated Device Technology Inc
Win Source Part Number: 122012-71V124SA10PHG8
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: SRAM - Asynchronous
Memory Type: Volatile
Memory Size: 1Mb (128K x 8)
Access Time: 10ns
Categories: Integrated Circuits
Status: Active
Temperature Range - Operating: 0°C to 70°C (TA)
Case / Package: 32-TSOP II
Supply Voltage - Operating: 3.15 V to 3.6 V
Memory Format: SRAM
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Integrated Device Technology Win Source Electronics
Product Category Memory Chips Memory Chips
Product Number 71V124SA10PHG8 122012-71V124SA10PHG8
Product Name 3.3V 128K x 8 Asynchronous Static RAM Center Power & Ground Pinout Memory - SRAM - 71V124SA10PHG8
Memory Category SRAM Chip Volatile; SRAM Chip
Access Time 10 ns 10 ns
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 1024 kbits
Number of Words 128 k
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