Integrated Device Technology 2.5V 512K X 36 ZBT Synchronous 2.5V I/O PipeLine SRAM 71T75602S166BGG

Description
The 71T75602 2.5V CMOS Synchronous SRAM organized as 512K x 36 (18 Megabit). It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71T75602 contains data I/O, address and control signal registers.
Datasheet
Description
The 71T75602 2.5V CMOS Synchronous SRAM organized as 512K x 36 (18 Megabit). It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71T75602 contains data I/O, address and control signal registers.
Datasheet

Suppliers

Company
Product
Description
Supplier Links
2.5V 512K X 36 ZBT Synchronous 2.5V I/O PipeLine SRAM - 71T75602S166BGG - Integrated Device Technology
San Jose, CA, USA
2.5V 512K X 36 ZBT Synchronous 2.5V I/O PipeLine SRAM
71T75602S166BGG
2.5V 512K X 36 ZBT Synchronous 2.5V I/O PipeLine SRAM 71T75602S166BGG
The 71T75602 2.5V CMOS Synchronous SRAM organized as 512K x 36 (18 Megabit). It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71T75602 contains data I/O, address and control signal registers.

The 71T75602 2.5V CMOS Synchronous SRAM organized as 512K x 36 (18 Megabit). It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus, it has been given the name ZBTTM , or Zero Bus Turnaround. The 71T75602 contains data I/O, address and control signal registers.

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - 71T75602S166BGG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
71T75602S166BGG
Integrated Circuits (ICs) - Memory - Memory 71T75602S166BGG
IC SRAM 18MBIT PARALLEL 119PBGA

IC SRAM 18MBIT PARALLEL 119PBGA

Supplier's Site
Memory - 71T75602S166BGG - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR (ZBT) Memory IC 18Mbit Parallel 166 MHz 3.5 ns 119-PBGA (14x22)

SRAM - Synchronous, SDR (ZBT) Memory IC 18Mbit Parallel 166 MHz 3.5 ns 119-PBGA (14x22)

Buy Now Datasheet

Technical Specifications

  Integrated Device Technology Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number 71T75602S166BGG 71T75602S166BGG 71T75602S166BGG
Product Name 2.5V 512K X 36 ZBT Synchronous 2.5V I/O PipeLine SRAM Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Data Rate 166 MHz
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 18432 kbits 18000 kbits 18000 kbits
Number of Words 512 k
Unlock Full Specs
to access all available technical data

Similar Products

Memory - MYX4DD3K512M72PBG2 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DDR3
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 4096000 kbits
View Details
SN54ABT7819 512 x 18 x 2 Synchronous Bidirectional FIFO Memory - 5962-9470401QXA - Texas Instruments
Specs
Memory Category FIFO
Package Type CPGA
View Details
3 suppliers
Memory - 5962F1120201QXA - Lingto Electronic Limited
Infineon Technologies AG
Specs
Memory Category SRAM; SRAM Chip
Density 72000 kbits
View Details
2 suppliers
Flash Memory - 1882540 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Bits per Word 8 bits
Pins 8
View Details