Integrated Device Technology Memory 71P74604S250BQ

Description
SRAM - Synchronous, QDR II Memory IC 18Mbit Parallel 250 MHz 8.4 ns 165-CABGA (13x15)
Datasheet
Description
SRAM - Synchronous, QDR II Memory IC 18Mbit Parallel 250 MHz 8.4 ns 165-CABGA (13x15)
Datasheet

Suppliers

Company
Product
Description
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Memory - 71P74604S250BQ - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, QDR II Memory IC 18Mbit Parallel 250 MHz 8.4 ns 165-CABGA (13x15)

SRAM - Synchronous, QDR II Memory IC 18Mbit Parallel 250 MHz 8.4 ns 165-CABGA (13x15)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - 71P74604S250BQ - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
71P74604S250BQ
Integrated Circuits (ICs) - Memory 71P74604S250BQ
18MBIT PIPELINED QDRII SRAM

18MBIT PIPELINED QDRII SRAM

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips
Product Number 71P74604S250BQ 71P74604S250BQ
Product Name Memory Integrated Circuits (ICs) - Memory
Memory Category SRAM; SRAM Chip Volatile; SRAM Chip
Access Time 8.4 ns 8.4 ns
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 18000 kbits 18000 kbits
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