Integrated Device Technology 5.0V 8K x 8 Asynchronous Static RAM 7164S55DB

Description
The 7164 5V CMOS SRAM is organized as 8K x 8. The 7164 offers a reduced power standby mode. The low-power (L) version also offers a battery backup data retention capability at power supply levels as low as 2V. All inputs and outputs of the IDT7164 are TTL -compatible and operation is from a single 5V supply, simplifying system designs. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.
Request a Quote Datasheet
Description
The 7164 5V CMOS SRAM is organized as 8K x 8. The 7164 offers a reduced power standby mode. The low-power (L) version also offers a battery backup data retention capability at power supply levels as low as 2V. All inputs and outputs of the IDT7164 are TTL -compatible and operation is from a single 5V supply, simplifying system designs. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
5.0V 8K x 8 Asynchronous Static RAM - 7164S55DB - Integrated Device Technology
San Jose, CA, USA
5.0V 8K x 8 Asynchronous Static RAM
7164S55DB
5.0V 8K x 8 Asynchronous Static RAM 7164S55DB
The 7164 5V CMOS SRAM is organized as 8K x 8. The 7164 offers a reduced power standby mode. The low-power (L) version also offers a battery backup data retention capability at power supply levels as low as 2V. All inputs and outputs of the IDT7164 are TTL -compatible and operation is from a single 5V supply, simplifying system designs. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.

The 7164 5V CMOS SRAM is organized as 8K x 8. The 7164 offers a reduced power standby mode. The low-power (L) version also offers a battery backup data retention capability at power supply levels as low as 2V. All inputs and outputs of the IDT7164 are TTL -compatible and operation is from a single 5V supply, simplifying system designs. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.

Supplier's Site Datasheet
Memory - SRAM - 7164S55DB - 197933-7164S55DB - Win Source Electronics
Laguna Hills, CA, United States
Memory - SRAM - 7164S55DB
197933-7164S55DB
Memory - SRAM - 7164S55DB 197933-7164S55DB
Manufacturer: IDT, Integrated Device Technology Inc Win Source Part Number: 197933-7164S55DB Packaging: Tube/Rail Mounting: Through Hole Technology: SRAM - Asynchronous Memory Type: Volatile Memory Size: 64Kb (8K x 8) Access Time: 55ns Categories: Integrated Circuits Status: Active Temperature Range - Operating: -55°C to 125°C (TA) Case / Package: 28-CerDip Supply Voltage - Operating: 4.5 V to 5.5 V Memory Format: SRAM Popularity: Medium Fake Threat In the Open Market: 54 pct. Supply and Demand Status: Limited

Manufacturer: IDT, Integrated Device Technology Inc
Win Source Part Number: 197933-7164S55DB
Packaging: Tube/Rail
Mounting: Through Hole
Technology: SRAM - Asynchronous
Memory Type: Volatile
Memory Size: 64Kb (8K x 8)
Access Time: 55ns
Categories: Integrated Circuits
Status: Active
Temperature Range - Operating: -55°C to 125°C (TA)
Case / Package: 28-CerDip
Supply Voltage - Operating: 4.5 V to 5.5 V
Memory Format: SRAM
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - 7164S55DB - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
7164S55DB
Integrated Circuits (ICs) - Memory 7164S55DB
IC SRAM 64KBIT PARALLEL 28CERDIP

IC SRAM 64KBIT PARALLEL 28CERDIP

Supplier's Site
Memory - 7164S55DB - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 64Kbit Parallel 55 ns 28-CDIP

SRAM - Asynchronous Memory IC 64Kbit Parallel 55 ns 28-CDIP

Buy Now Datasheet

Technical Specifications

  Integrated Device Technology Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 7164S55DB 197933-7164S55DB 7164S55DB 7164S55DB
Product Name 5.0V 8K x 8 Asynchronous Static RAM Memory - SRAM - 7164S55DB Integrated Circuits (ICs) - Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Access Time 55 ns 55 ns 55 ns 55 ns
Operating Temperature -55 to 125 C (-67 to 257 F) -55 to 125 C (-67 to 257 F) -55 to 125 C (-67 to 257 F) -55 to 125 C (-67 to 257 F)
Density 64 kbits 64 kbits 64 kbits
Number of Words 8 k
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