Integrated Device Technology 5.0V 32K x 8 Asynchronous Static RAM 71256S35TDB

Description
The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available.
Datasheet
Description
The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available.
Datasheet

Suppliers

Company
Product
Description
Supplier Links
5.0V 32K x 8 Asynchronous Static RAM - 71256S35TDB - Integrated Device Technology
San Jose, CA, USA
5.0V 32K x 8 Asynchronous Static RAM
71256S35TDB
5.0V 32K x 8 Asynchronous Static RAM 71256S35TDB
The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available.

The 71256 5V CMOS SRAM is organized as 32K x 8. The circuit also offers a reduced power standby mode for significant system level power and cooling savings. The low-power (L) version also offers a battery backup data retention capability allowing operation off a 2V battery. Fully static asynchronous circuitry is used; no clocks or refreshes are required for operation. Military grade product is available.

Supplier's Site Datasheet
Memory - 71256S35TDB - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 256Kbit Parallel 35 ns 28-CDIP

SRAM - Asynchronous Memory IC 256Kbit Parallel 35 ns 28-CDIP

Buy Now Datasheet

Technical Specifications

  Integrated Device Technology Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number 71256S35TDB 71256S35TDB
Product Name 5.0V 32K x 8 Asynchronous Static RAM Memory
Memory Category SRAM Chip SRAM; SRAM Chip
Access Time 35 ns 35 ns
Operating Temperature -55 to 125 C (-67 to 257 F) -55 to 125 C (-67 to 257 F)
Density 256 kbits 256 kbits
Number of Words 32 k
Unlock Full Specs
to access all available technical data

Similar Products

Memory - MYXxxSMS04GP32PB1-45/x - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category MRAM; STT-MRAM
Access Time 45 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
 - LP3913SQ-AU/NOPB - Rochester Electronics
Texas Instruments
Specs
Memory Category Flash
Package Type HVQFN48
View Details
SDRAM - 1882632P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 5 ns
Density 2048000 kbits
View Details