The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power ( LA ) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL -compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.
IC SRAM 16KBIT PARALLEL 24CDIP Product overview: 6116SA90TDB from Integrated Device Technology (IDT) is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-6116SA90TDB can be used for catalog matching and distributor lookup.
5.0V 2K x 8 Asynchronous Static RAM
SRAM - Asynchronous Memory IC 16Kbit Parallel 90 ns 24-CDIP
IC SRAM 16KBIT PARALLEL 24CDIP
| Integrated Device Technology | ERSAELECTRONICS PTE. LTD. | Rochester Electronics | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 6116SA90TDB | 774-6116SA90TDB | 6116SA90TDB | 6116SA90TDB | 6116SA90TDB |
| Product Name | 5.0V 2K x 8 Asynchronous Static RAM | Memory IC and Storage Component | Memory | Integrated Circuits (ICs) - Memory - Memory | |
| Memory Category | SRAM Chip | Volatile; SRAM Chip | SRAM Chip | SRAM; SRAM Chip | Volatile; SRAM Chip |
| Access Time | 90 ns | 90 ns | 90 ns | ||
| Operating Temperature | -55 to 125 C (-67 to 257 F) | -55 to 125 C (-67 to 257 F) | -55 to 125 C (-67 to 257 F) | ||
| Density | 16 kbits | 16 kbits | 16 kbits | ||
| Number of Words | 2 k |
