The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power ( LA ) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL -compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.
Standard SRAM, 2KX8, 25ns, CMOS, PDSO24
IC SRAM 16KBIT PARALLEL 24SOIC
SRAM - Asynchronous Memory IC 16Kbit Parallel 25 ns 24-SOIC
| Integrated Device Technology | Rochester Electronics | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 6116SA25SOG | 6116SA25SOG | 6116SA25SOG | 6116SA25SOG |
| Product Name | 5.0V 2K x 8 Asynchronous Static RAM | Integrated Circuits (ICs) - Memory - Memory | Memory | |
| Memory Category | SRAM Chip | SRAM Chip | Volatile; SRAM Chip | SRAM; SRAM Chip |
| Access Time | 25 ns | 25 ns | ||
| Operating Temperature | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | ||
| Density | 16 kbits | 16 kbits | 16 kbits | |
| Number of Words | 2 k |
