Integrated Device Technology 5.0V 2K x 8 Asynchronous Static RAM 6116SA20SOG8

Description
The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power ( LA ) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL -compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.
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Description
The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power ( LA ) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL -compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.
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Suppliers

Company
Product
Description
Supplier Links
5.0V 2K x 8 Asynchronous Static RAM - 6116SA20SOG8 - Integrated Device Technology
San Jose, CA, USA
5.0V 2K x 8 Asynchronous Static RAM
6116SA20SOG8
5.0V 2K x 8 Asynchronous Static RAM 6116SA20SOG8
The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power ( LA ) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL -compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.

The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power ( LA ) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL -compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.

Supplier's Site Datasheet
Memory - SRAM - 6116SA20SOG8 - 721778-6116SA20SOG8 - Win Source Electronics
Laguna Hills, CA, United States
Memory - SRAM - 6116SA20SOG8
721778-6116SA20SOG8
Memory - SRAM - 6116SA20SOG8 721778-6116SA20SOG8
Manufacturer: IDT, Integrated Device Technology Inc Win Source Part Number: 721778-6116SA20SOG8 Packaging: Reel - TR Operating Temperature Range: 0°C ~ 70°C (TA) Package: 24-SOIC (0.295", 7.50mm Width) Mounting: SMD Technology: SRAM - Asynchronous Operating Supply Voltage: 4.5 V ~ 5.5 V Memory Type: Volatile Memory Size: 16Kb (2K x 8) Access Time: 20ns Family Name: 6116SA Categories: Integrated Circuits (ICs) Memory Format: SRAM Manufacturer Homepage: www.idt.com RoHS State: Request Verification Write Cycle Time - Word, Page: 20ns Memory Interface: Parallel Manufacturer Package: 24-SOIC Alternative Parts (Cross-Reference): LH5116NA-10; DS2016R-150+; DS2016R-100; Introduction Date: March 01, 1996 ECCN: EAR99 Country of Origin: Philippines, Taiwan Estimated EOL Date: 2026 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited

Manufacturer: IDT, Integrated Device Technology Inc
Win Source Part Number: 721778-6116SA20SOG8
Packaging: Reel - TR
Operating Temperature Range: 0°C ~ 70°C (TA)
Package: 24-SOIC (0.295", 7.50mm Width)
Mounting: SMD
Technology: SRAM - Asynchronous
Operating Supply Voltage: 4.5 V ~ 5.5 V
Memory Type: Volatile
Memory Size: 16Kb (2K x 8)
Access Time: 20ns
Family Name: 6116SA
Categories: Integrated Circuits (ICs)
Memory Format: SRAM
Manufacturer Homepage: www.idt.com
RoHS State: Request Verification
Write Cycle Time - Word, Page: 20ns
Memory Interface: Parallel
Manufacturer Package: 24-SOIC
Alternative Parts (Cross-Reference): LH5116NA-10; DS2016R-150+; DS2016R-100;
Introduction Date: March 01, 1996
ECCN: EAR99
Country of Origin: Philippines, Taiwan
Estimated EOL Date: 2026
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited

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Technical Specifications

  Integrated Device Technology Win Source Electronics
Product Category Memory Chips Memory Chips
Product Number 6116SA20SOG8 721778-6116SA20SOG8
Product Name 5.0V 2K x 8 Asynchronous Static RAM Memory - SRAM - 6116SA20SOG8
Memory Category SRAM Chip Volatile; SRAM Chip
Access Time 20 ns 20 ns
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 16 kbits
Number of Words 2 k
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