Integrated Device Technology Integrated Circuits (ICs) - Memory 6116LA15TPG

Description
Win Source Part Number: 1316015-6116LA15TPG Category: Integrated Circuits (ICs)>Memory Package: Bulk Technology: SRAM - Asynchronous Memory Type: Volatile Memory Size: 16Kb (2K x 8) Access Time: 15 ns Voltage - Supply: 4.5V ~ 5.5V Mounting Type: Through Hole Package / Case: 24-DIP (0.300", 7.62mm) Supplier Device Package: 24-PDIP Temperature Range - Operating: -40°C ~ 85°C (TA) Memory Format: SRAM Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel ECCN: EAR99 Fake Threat In the Open Market: 50 pct. HTSUS: 8542.32.0041 Mfr: IDT, Integrated Device Technology Inc Base Product Number: 6116LA
Request a Quote
Description
Win Source Part Number: 1316015-6116LA15TPG Category: Integrated Circuits (ICs)>Memory Package: Bulk Technology: SRAM - Asynchronous Memory Type: Volatile Memory Size: 16Kb (2K x 8) Access Time: 15 ns Voltage - Supply: 4.5V ~ 5.5V Mounting Type: Through Hole Package / Case: 24-DIP (0.300", 7.62mm) Supplier Device Package: 24-PDIP Temperature Range - Operating: -40°C ~ 85°C (TA) Memory Format: SRAM Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel ECCN: EAR99 Fake Threat In the Open Market: 50 pct. HTSUS: 8542.32.0041 Mfr: IDT, Integrated Device Technology Inc Base Product Number: 6116LA
Request a Quote
Datasheet
Datasheet Summary
Powered by GS/AI

The IDT6116LA15TPG is a 16K-bit (2K x 8-bit) CMOS static RAM designed for high-speed applications, featuring access times of 15 ns. It operates with a supply voltage of 5.0V ¬± 10% and is available in various package types, including 24-pin DIP and SOIC. This low-power version supports battery backup operation with a data retention voltage of 2V, consuming only 1¬µW to 4¬µW during operation off a battery. The device is fully static, requiring no clocks or refresh cycles, and is TTL-compatible for both inputs and outputs. It is compliant with military standards (MIL-STD-883, Class B), making it suitable for high-reliability applications in military environments with operating temperatures ranging from -55¬8C to +125¬8C. The IDT6116LA15TPG is ideal for engineers seeking a reliable, low-power memory solution for demanding applications.

Datasheet Summary
Powered by GS/AI

The IDT6116LA15TPG is a 16K-bit (2K x 8-bit) CMOS static RAM designed for high-speed applications, featuring access times of 15 ns. It operates with a supply voltage of 5.0V ¬± 10% and is available in various package types, including 24-pin DIP and SOIC. This low-power version supports battery backup operation with a data retention voltage of 2V, consuming only 1¬µW to 4¬µW during operation off a battery. The device is fully static, requiring no clocks or refresh cycles, and is TTL-compatible for both inputs and outputs. It is compliant with military standards (MIL-STD-883, Class B), making it suitable for high-reliability applications in military environments with operating temperatures ranging from -55¬8C to +125¬8C. The IDT6116LA15TPG is ideal for engineers seeking a reliable, low-power memory solution for demanding applications.

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - 1316015-6116LA15TPG - Win Source Electronics
Laguna Hills, CA, United States
Integrated Circuits (ICs) - Memory
1316015-6116LA15TPG
Integrated Circuits (ICs) - Memory 1316015-6116LA15TPG
Win Source Part Number: 1316015-6116LA15TPG Category: Integrated Circuits (ICs)>Memory Package: Bulk Technology: SRAM - Asynchronous Memory Type: Volatile Memory Size: 16Kb (2K x 8) Access Time: 15 ns Voltage - Supply: 4.5V ~ 5.5V Mounting Type: Through Hole Package / Case: 24-DIP (0.300", 7.62mm) Supplier Device Package: 24-PDIP Temperature Range - Operating: -40°C ~ 85°C (TA) Memory Format: SRAM Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel ECCN: EAR99 Fake Threat In the Open Market: 50 pct. HTSUS: 8542.32.0041 Mfr: IDT, Integrated Device Technology Inc Base Product Number: 6116LA

Win Source Part Number: 1316015-6116LA15TPG
Category: Integrated Circuits (ICs)>Memory
Package: Bulk
Technology: SRAM - Asynchronous
Memory Type: Volatile
Memory Size: 16Kb (2K x 8)
Access Time: 15 ns
Voltage - Supply: 4.5V ~ 5.5V
Mounting Type: Through Hole
Package / Case: 24-DIP (0.300", 7.62mm)
Supplier Device Package: 24-PDIP
Temperature Range - Operating: -40°C ~ 85°C (TA)
Memory Format: SRAM
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
ECCN: EAR99
Fake Threat In the Open Market: 50 pct.
HTSUS: 8542.32.0041
Mfr: IDT, Integrated Device Technology Inc
Base Product Number: 6116LA

Buy Now Datasheet
Memory - 6116LA15TPG - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 16Kbit Parallel 15 ns 24-PDIP

SRAM - Asynchronous Memory IC 16Kbit Parallel 15 ns 24-PDIP

Buy Now Datasheet

Technical Specifications

  Win Source Electronics Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number 1316015-6116LA15TPG 6116LA15TPG
Product Name Integrated Circuits (ICs) - Memory Memory
Memory Category Volatile; SRAM Chip SRAM; SRAM Chip
Access Time 15 ns 15 ns
Cycle Time 15 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Unlock Full Specs
to access all available technical data

Similar Products

Memory - MYXxxSMS01GP32PB1-45/x - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category MRAM; STT-MRAM
Access Time 45 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
SDRAM - 1882599 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 5 ns
Bits per Word 8 bits
View Details
Memory - CY14B102NS-BA45XCT-ND - DigiKey
Infineon Technologies AG
Specs
Memory Category NVRAM; NVSRAM
Operating Temperature 0 to 70 C (32 to 158 F)
Density 2000 kbits
View Details
3 suppliers