The IGT5259CW50 is a GaN-on-SiC RF power transistor designed for C-band radar systems, operating from 5.2 to 5.9 GHz with a 50-ohm matched input and output. It delivers 50 W continuous wave output power at 28 V drain voltage, with up to 50% drain efficiency and 11.6 dB typical gain. The device is housed in a metal-based package with a bolt-down flange and epoxy-sealed ceramic lid. It supports a junction temperature range of -55°C to +200°C and complies with RoHS and REACH regulations. Maximum drain-source voltage is 130 V, and drain current is rated at 9.6 A. The transistor is 100% RF tested and has a peak thermal resistance of 0.9°C/W from channel to case.
| DigiKey | |
|---|---|
| Product Category | Transistors |
| Product Number | 2251-IGT5259CW50-ND |
| Product Name | RF FETs, MOSFETs |
