Currently not available for sale in the U.S.
The ISG6109 Solid GaN IC integrates a 700V E-Mode GaN FET with a high-voltage linear regulator, a smart gate driver, and loss-less current sense circuitry. The high-voltage linear regulator with up to 80V input capability eliminates the need for external LDO and maintains tightly regulated 6.5V gate drive voltage. The integrated smart gate driver offers programmable 1st stage turn-on speed for slew rate control and delayed 2nd-stage turn-on enhancement, thereby achieving high frequency, high efficiency, and low EMI performance. The loss-less current sense circuit eliminates external current sense resistor and increases system efficiency. Additional features include 5V LDO supplying external digital isolators, UVLO, OCP, and OTP protection.
The high level of integration with high current sense accuracy and low quiescent current makes the ISG6109 suitable for a simple to use, low component count, and high efficiency application solution.
Features
320mOhm E-Mode GaN with Integrated Gate Driver
700V Continuous, 800V Transient Voltage Rating
Wide 9V to 80V VCC Range Eliminates Extra LDO
115uA Quiescent Current with Auto Standby Mode
Integrated Loss-less Current Sensing
Programmable Switch Turn-On Slew Rate
High dv/dt Immunity up to 200V/ns
Zero Reverse Recovery Charge
High Frequency Operation Up to 2MHz
Fast Propagation Delay (25ns Typical)
Integrated 5V LDO for supplying Digital Isolator
Built-In UVLO, OCP, OTP Protection
QFN 6mmx8mm Package, 0.85mm Low Profile
Applications
AC-DC, DC-DC, DC-AC Power Supply
PFC, QR Flyback, ACF, Half Bridge, Full Bridge
PD Adaptor, LED Lighting, Solar Micro Inverter
Server and Telecom Power Supply
Currently not available for sale in the U.S.
The ISG6109 Solid GaN IC integrates a 700V E-Mode GaN FET with a high-voltage linear regulator, a smart gate driver, and loss-less current sense circuitry. The high-voltage linear regulator with up to 80V input capability eliminates the need for external LDO and maintains tightly regulated 6.5V gate drive voltage. The integrated smart gate driver offers programmable 1st stage turn-on speed for slew rate control and delayed 2nd-stage turn-on enhancement, thereby achieving high frequency, high efficiency, and low EMI performance. The loss-less current sense circuit eliminates external current sense resistor and increases system efficiency. Additional features include 5V LDO supplying external digital isolators, UVLO, OCP, and OTP protection.
The high level of integration with high current sense accuracy and low quiescent current makes the ISG6109 suitable for a simple to use, low component count, and high efficiency application solution.
Features
- 320mOhm E-Mode GaN with Integrated Gate Driver
- 700V Continuous, 800V Transient Voltage Rating
- Wide 9V to 80V VCC Range Eliminates Extra LDO
- 115uA Quiescent Current with Auto Standby Mode
- Integrated Loss-less Current Sensing
- Programmable Switch Turn-On Slew Rate
- High dv/dt Immunity up to 200V/ns
- Zero Reverse Recovery Charge
- High Frequency Operation Up to 2MHz
- Fast Propagation Delay (25ns Typical)
- Integrated 5V LDO for supplying Digital Isolator
- Built-In UVLO, OCP, OTP Protection
- QFN 6mmx8mm Package, 0.85mm Low Profile
Applications
- AC-DC, DC-DC, DC-AC Power Supply
- PFC, QR Flyback, ACF, Half Bridge, Full Bridge
- PD Adaptor, LED Lighting, Solar Micro Inverter
- Server and Telecom Power Supply
