Currently not available for sale in the U.S.
GaN-on-Silicon enhancement mode high-electron-mobili
ty-transistor (HEMT) in LGA with 2.3 mm x 3.3 mm package size
Features
AEC-Q101 Qualified
Ultra-High Switching Frequency and Ultra-Low Rds(on)
Fast and Controllable Fall and Rise Time
Zero Reverse Recovery Loss
Applications
LIDAR Application
Synchronous Rectification and Class D Audio
Envelope Tracking Power Supplies
High Frequency DC-DC Converter
Currently not available for sale in the U.S.
GaN-on-Silicon enhancement mode high-electron-mobility-transistor (HEMT) in LGA with 2.3 mm x 3.3 mm package size
Features
- AEC-Q101 Qualified
- Ultra-High Switching Frequency and Ultra-Low Rds(on)
- Fast and Controllable Fall and Rise Time
- Zero Reverse Recovery Loss
Applications
- LIDAR Application
- Synchronous Rectification and Class D Audio
- Envelope Tracking Power Supplies
- High Frequency DC-DC Converter
