Infineon Technologies AG DC-DC Converters, Integrated Smart Power Stages TDA21590

Description
High Efficiency OptiMOS™ 90A Integrated internal Current Sense Power Stage The TDA21590 integrated power stage contains a low quiescent current synchronous buck gate-driver IC which is co-packed with control and synchronous MOSFETs along with an active diode structure that achieves low VDS similar to a Schottky with very little reverse recovery charge. The package is optimized for PCB layout, heat transfer, driver/MOSFET control timing, and minimal switch-node ringing when layout guidelines are followed. The paired gate driver and MOSFET combination enables higher efficiency at lower output voltages required by cutting edge CPU, GPU and DDR memory designs. The internal MOSFET sensing achieves superior current sense accuracy vs. best-in-class controller-based inductor DCR sense methods. Protection includes IC temperature reporting and over temperature protection feature (OTP with thermal shutdown), cycle-by-cycle over current protection (OCP), control MOSFET short detection (HSS – High-side short detection), VDRV and bootstrap under-voltage protection. The TDA21590 also features "refreshing" of bootstrap capacitor to prevent the bootstrap capacitor from over-discharging. Operation of up to 1.5 MHz switching frequency enables high performance transient response, allowing miniaturization of output inductors, as well as input and output capacitors while maintaining industry leading efficiency. Summary of Features Integrated driver, active diode, control MOSFET Q1 and synchronous MOSFET Q2 On-chip MOSFET current sensing (+/-3% Imon accuracy range) Input voltage (VIN) range of 4.25 V to 16 V Output current capability of 90A (120A OCP) Enhanced fault reporting and identification Over temperature protection and thermal shutdown Auto-replenishment on bootstrap capacitor Compatible with 3.3 V tri-state PWM input DEEP SLEEP mode for power saving via EN= low (32 µA typ) Small 5 mm x 6 mm x 0.9 mm PQFN package Benefits High current efficiency Industry best current sense accuracy Enhance fault identification and reporting Advanced protection features like high-side MOSFET fault detection, over temperature and thermal shutdown Low quiescent for power saving via EN = low Potential Applications High frequency, low profile DC-DC converters Voltage regulators for CPUs, GPUs and DDR memory arrays Telecom controlled and uncontrolled Applications 48 V intermediate bus converter (IBC) Body electronics and power distribution Data center and AI data center solutions Edge computing Telecommunication infrastructure
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Description
High Efficiency OptiMOS™ 90A Integrated internal Current Sense Power Stage The TDA21590 integrated power stage contains a low quiescent current synchronous buck gate-driver IC which is co-packed with control and synchronous MOSFETs along with an active diode structure that achieves low VDS similar to a Schottky with very little reverse recovery charge. The package is optimized for PCB layout, heat transfer, driver/MOSFET control timing, and minimal switch-node ringing when layout guidelines are followed. The paired gate driver and MOSFET combination enables higher efficiency at lower output voltages required by cutting edge CPU, GPU and DDR memory designs. The internal MOSFET sensing achieves superior current sense accuracy vs. best-in-class controller-based inductor DCR sense methods. Protection includes IC temperature reporting and over temperature protection feature (OTP with thermal shutdown), cycle-by-cycle over current protection (OCP), control MOSFET short detection (HSS – High-side short detection), VDRV and bootstrap under-voltage protection. The TDA21590 also features "refreshing" of bootstrap capacitor to prevent the bootstrap capacitor from over-discharging. Operation of up to 1.5 MHz switching frequency enables high performance transient response, allowing miniaturization of output inductors, as well as input and output capacitors while maintaining industry leading efficiency. Summary of Features Integrated driver, active diode, control MOSFET Q1 and synchronous MOSFET Q2 On-chip MOSFET current sensing (+/-3% Imon accuracy range) Input voltage (VIN) range of 4.25 V to 16 V Output current capability of 90A (120A OCP) Enhanced fault reporting and identification Over temperature protection and thermal shutdown Auto-replenishment on bootstrap capacitor Compatible with 3.3 V tri-state PWM input DEEP SLEEP mode for power saving via EN= low (32 µA typ) Small 5 mm x 6 mm x 0.9 mm PQFN package Benefits High current efficiency Industry best current sense accuracy Enhance fault identification and reporting Advanced protection features like high-side MOSFET fault detection, over temperature and thermal shutdown Low quiescent for power saving via EN = low Potential Applications High frequency, low profile DC-DC converters Voltage regulators for CPUs, GPUs and DDR memory arrays Telecom controlled and uncontrolled Applications 48 V intermediate bus converter (IBC) Body electronics and power distribution Data center and AI data center solutions Edge computing Telecommunication infrastructure
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Suppliers

Company
Product
Description
Supplier Links
DC-DC Converters, Integrated Smart Power Stages - TDA21590 - Infineon Technologies AG
Neubiberg, Germany
DC-DC Converters, Integrated Smart Power Stages
TDA21590
DC-DC Converters, Integrated Smart Power Stages TDA21590
High Efficiency OptiMOS™ 90A Integrated internal Current Sense Power Stage The TDA21590 integrated power stage contains a low quiescent current synchronous buck gate-driver IC which is co-packed with control and synchronous MOSFETs along with an active diode structure that achieves low VDS similar to a Schottky with very little reverse recovery charge. The package is optimized for PCB layout, heat transfer, driver/MOSFET control timing, and minimal switch-node ringing when layout guidelines are followed. The paired gate driver and MOSFET combination enables higher efficiency at lower output voltages required by cutting edge CPU, GPU and DDR memory designs. The internal MOSFET sensing achieves superior current sense accuracy vs. best-in-class controller-based inductor DCR sense methods. Protection includes IC temperature reporting and over temperature protection feature (OTP with thermal shutdown), cycle-by-cycle over current protection (OCP), control MOSFET short detection (HSS – High-side short detection), VDRV and bootstrap under-voltage protection. The TDA21590 also features "refreshing" of bootstrap capacitor to prevent the bootstrap capacitor from over-discharging. Operation of up to 1.5 MHz switching frequency enables high performance transient response, allowing miniaturization of output inductors, as well as input and output capacitors while maintaining industry leading efficiency. Summary of Features Integrated driver, active diode, control MOSFET Q1 and synchronous MOSFET Q2 On-chip MOSFET current sensing (+/-3% Imon accuracy range) Input voltage (VIN) range of 4.25 V to 16 V Output current capability of 90A (120A OCP) Enhanced fault reporting and identification Over temperature protection and thermal shutdown Auto-replenishment on bootstrap capacitor Compatible with 3.3 V tri-state PWM input DEEP SLEEP mode for power saving via EN= low (32 µA typ) Small 5 mm x 6 mm x 0.9 mm PQFN package Benefits High current efficiency Industry best current sense accuracy Enhance fault identification and reporting Advanced protection features like high-side MOSFET fault detection, over temperature and thermal shutdown Low quiescent for power saving via EN = low Potential Applications High frequency, low profile DC-DC converters Voltage regulators for CPUs, GPUs and DDR memory arrays Telecom controlled and uncontrolled Applications 48 V intermediate bus converter (IBC) Body electronics and power distribution Data center and AI data center solutions Edge computing Telecommunication infrastructure

High Efficiency OptiMOS™ 90A Integrated internal Current Sense Power Stage

The TDA21590 integrated power stage contains a low quiescent current synchronous buck gate-driver IC which is co-packed with control and synchronous MOSFETs along with an active diode structure that achieves low VDS similar to a Schottky with very little reverse recovery charge. The package is optimized for PCB layout, heat transfer, driver/MOSFET control timing, and minimal switch-node ringing when layout guidelines are followed. The paired gate driver and MOSFET combination enables higher efficiency at lower output voltages required by cutting edge CPU, GPU and DDR memory designs.

The internal MOSFET sensing achieves superior current sense accuracy vs. best-in-class controller-based inductor DCR sense methods.

Protection includes IC temperature reporting and over temperature protection feature (OTP with thermal shutdown), cycle-by-cycle over current protection (OCP), control MOSFET short detection (HSS – High-side short detection), VDRV and bootstrap under-voltage protection. The TDA21590 also features "refreshing" of bootstrap capacitor to prevent the bootstrap capacitor from over-discharging.

Operation of up to 1.5 MHz switching frequency enables high performance transient response, allowing miniaturization of output inductors, as well as input and output capacitors while maintaining industry leading efficiency.


Summary of Features

  • Integrated driver, active diode, control MOSFET Q1 and synchronous MOSFET Q2
  • On-chip MOSFET current sensing (+/-3% Imon accuracy range)
  • Input voltage (VIN) range of 4.25 V to 16 V
  • Output current capability of 90A (120A OCP)
  • Enhanced fault reporting and identification
  • Over temperature protection and thermal shutdown
  • Auto-replenishment on bootstrap capacitor
  • Compatible with 3.3 V tri-state PWM input
  • DEEP SLEEP mode for power saving via EN= low (32 µA typ)
  • Small 5 mm x 6 mm x 0.9 mm PQFN package

Benefits

  • High current efficiency
  • Industry best current sense accuracy
  • Enhance fault identification and reporting
  • Advanced protection features like high-side MOSFET fault detection, over temperature and thermal shutdown
  • Low quiescent for power saving via EN = low

Potential Applications

  • High frequency, low profile DC-DC converters
  • Voltage regulators for CPUs, GPUs and DDR memory arrays
  • Telecom controlled and uncontrolled

Applications

  • 48 V intermediate bus converter (IBC)
  • Body electronics and power distribution
  • Data center and AI data center solutions
  • Edge computing
  • Telecommunication infrastructure
Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power Supplies
Product Number TDA21590
Product Name DC-DC Converters, Integrated Smart Power Stages
Type DC-DC Converter
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