Infineon Technologies AG DC-DC Converters, Integrated Smart Power Stages TDA21570

Description
High-efficiency OptiMOS™ 70 A integrated power stage with internal current sense Infineon’s TDA21570, 70 A integrated power stage, contains a low quiescent current synchronous buck gate-driver IC. In addition, the TDA21570 combines control and synchronous MOSFETs along with an active diode structure that achieves low VSD similar to a Schottky Diode with very little reverse recovery charge. The package is optimized for PCB layout, heat transfer, driver/MOSFET control timing, and minimal switch node ringing when layout guidelines are followed. The paired gate driver and MOSFET combination enables higher efficiency at lower output voltages required by cutting edge CPU, GPU and DDR memory designs. Operation of up to 1.5 MHz switching frequency enables high performance transient response, allowing miniaturization of output inductors, as well as input and output capacitors while maintaining industry leading efficiency. Summary of Features Integrated driver, active diode, control MOSFET Q1 and synchronous MOSFET Q2 On-chip MOSFET current sensing and reporting at 5 µA/A Input voltage (VIN) range of 4.25 V to 16 V Output current capability of 70 A Enhanced Fault reporting and identification Over temperature protection and thermal shutdown Auto-replenishment on bootstrap capacitor Compatible with 3.3 V tri-state PWM Input DEEP SLEEP mode for power saving via EN= low (32 µA typ) Small 5 mm x 6 mm x 0.9 mm PQFN package Benefits High efficiency Industry best current sense accuracy Enhance fault identification and reporting Advanced protection features like high-side MOSFET short detection, over temp and thermal shutdown Low quiescent for power saving via EN = low Potential Applications High frequency, low profile DC-DC converters Voltage regulators for CPUs, GPUs and DDR memory arrays Telecom controlled and uncontrolled Applications 48 V intermediate bus converter (IBC) Edge computing Industrial PC Programmable logic controller (PLC) Telecommunication infrastructure Designers who used this product also designed with BSC014N04LSI | N-Channel Power MOSFET BSC032N04LS | N-Channel Power MOSFET XDPE14284A-0000 | Digital Multiphase Controllers IPB017N10N5LF | N-Channel Power MOSFET IR3889MTRPBF | Integrated POL Voltage Regulators BSS214N | Small signal/small power MOSFET SLB 9670VQ2.0 | OPTIGA™ TPM - Trusted Platform Module BSC014N04LSI | N-Channel Power MOSFET BSC032N04LS | N-Channel Power MOSFET XDPE14284A-0000 | Digital Multiphase Controllers IPB017N10N5LF | N-Channel Power MOSFET IR3889MTRPBF | Integrated POL Voltage Regulators BSS214N | Small signal/small power MOSFET SLB 9670VQ2.0 | OPTIGA™ TPM - Trusted Platform Module BSC014N04LSI | N-Channel Power MOSFET 1 2
Request a Quote Datasheet
Description
High-efficiency OptiMOS™ 70 A integrated power stage with internal current sense Infineon’s TDA21570, 70 A integrated power stage, contains a low quiescent current synchronous buck gate-driver IC. In addition, the TDA21570 combines control and synchronous MOSFETs along with an active diode structure that achieves low VSD similar to a Schottky Diode with very little reverse recovery charge. The package is optimized for PCB layout, heat transfer, driver/MOSFET control timing, and minimal switch node ringing when layout guidelines are followed. The paired gate driver and MOSFET combination enables higher efficiency at lower output voltages required by cutting edge CPU, GPU and DDR memory designs. Operation of up to 1.5 MHz switching frequency enables high performance transient response, allowing miniaturization of output inductors, as well as input and output capacitors while maintaining industry leading efficiency. Summary of Features Integrated driver, active diode, control MOSFET Q1 and synchronous MOSFET Q2 On-chip MOSFET current sensing and reporting at 5 µA/A Input voltage (VIN) range of 4.25 V to 16 V Output current capability of 70 A Enhanced Fault reporting and identification Over temperature protection and thermal shutdown Auto-replenishment on bootstrap capacitor Compatible with 3.3 V tri-state PWM Input DEEP SLEEP mode for power saving via EN= low (32 µA typ) Small 5 mm x 6 mm x 0.9 mm PQFN package Benefits High efficiency Industry best current sense accuracy Enhance fault identification and reporting Advanced protection features like high-side MOSFET short detection, over temp and thermal shutdown Low quiescent for power saving via EN = low Potential Applications High frequency, low profile DC-DC converters Voltage regulators for CPUs, GPUs and DDR memory arrays Telecom controlled and uncontrolled Applications 48 V intermediate bus converter (IBC) Edge computing Industrial PC Programmable logic controller (PLC) Telecommunication infrastructure Designers who used this product also designed with BSC014N04LSI | N-Channel Power MOSFET BSC032N04LS | N-Channel Power MOSFET XDPE14284A-0000 | Digital Multiphase Controllers IPB017N10N5LF | N-Channel Power MOSFET IR3889MTRPBF | Integrated POL Voltage Regulators BSS214N | Small signal/small power MOSFET SLB 9670VQ2.0 | OPTIGA™ TPM - Trusted Platform Module BSC014N04LSI | N-Channel Power MOSFET BSC032N04LS | N-Channel Power MOSFET XDPE14284A-0000 | Digital Multiphase Controllers IPB017N10N5LF | N-Channel Power MOSFET IR3889MTRPBF | Integrated POL Voltage Regulators BSS214N | Small signal/small power MOSFET SLB 9670VQ2.0 | OPTIGA™ TPM - Trusted Platform Module BSC014N04LSI | N-Channel Power MOSFET 1 2
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Supplier Links
DC-DC Converters, Integrated Smart Power Stages - TDA21570 - Infineon Technologies AG
Neubiberg, Germany
DC-DC Converters, Integrated Smart Power Stages
TDA21570
DC-DC Converters, Integrated Smart Power Stages TDA21570
High-efficiency OptiMOS™ 70 A integrated power stage with internal current sense Infineon’s TDA21570, 70 A integrated power stage, contains a low quiescent current synchronous buck gate-driver IC. In addition, the TDA21570 combines control and synchronous MOSFETs along with an active diode structure that achieves low VSD similar to a Schottky Diode with very little reverse recovery charge. The package is optimized for PCB layout, heat transfer, driver/MOSFET control timing, and minimal switch node ringing when layout guidelines are followed. The paired gate driver and MOSFET combination enables higher efficiency at lower output voltages required by cutting edge CPU, GPU and DDR memory designs. Operation of up to 1.5 MHz switching frequency enables high performance transient response, allowing miniaturization of output inductors, as well as input and output capacitors while maintaining industry leading efficiency. Summary of Features Integrated driver, active diode, control MOSFET Q1 and synchronous MOSFET Q2 On-chip MOSFET current sensing and reporting at 5 µA/A Input voltage (VIN) range of 4.25 V to 16 V Output current capability of 70 A Enhanced Fault reporting and identification Over temperature protection and thermal shutdown Auto-replenishment on bootstrap capacitor Compatible with 3.3 V tri-state PWM Input DEEP SLEEP mode for power saving via EN= low (32 µA typ) Small 5 mm x 6 mm x 0.9 mm PQFN package Benefits High efficiency Industry best current sense accuracy Enhance fault identification and reporting Advanced protection features like high-side MOSFET short detection, over temp and thermal shutdown Low quiescent for power saving via EN = low Potential Applications High frequency, low profile DC-DC converters Voltage regulators for CPUs, GPUs and DDR memory arrays Telecom controlled and uncontrolled Applications 48 V intermediate bus converter (IBC) Edge computing Industrial PC Programmable logic controller (PLC) Telecommunication infrastructure Designers who used this product also designed with BSC014N04LSI | N-Channel Power MOSFET BSC032N04LS | N-Channel Power MOSFET XDPE14284A-0000 | Digital Multiphase Controllers IPB017N10N5LF | N-Channel Power MOSFET IR3889MTRPBF | Integrated POL Voltage Regulators BSS214N | Small signal/small power MOSFET SLB 9670VQ2.0 | OPTIGA™ TPM - Trusted Platform Module BSC014N04LSI | N-Channel Power MOSFET BSC032N04LS | N-Channel Power MOSFET XDPE14284A-0000 | Digital Multiphase Controllers IPB017N10N5LF | N-Channel Power MOSFET IR3889MTRPBF | Integrated POL Voltage Regulators BSS214N | Small signal/small power MOSFET SLB 9670VQ2.0 | OPTIGA™ TPM - Trusted Platform Module BSC014N04LSI | N-Channel Power MOSFET 1 2

High-efficiency OptiMOS™ 70 A integrated power stage with internal current sense

Infineon’s TDA21570, 70 A integrated power stage, contains a low quiescent current synchronous buck gate-driver IC. In addition, the TDA21570 combines control and synchronous MOSFETs along with an active diode structure that achieves low VSD similar to a Schottky Diode with very little reverse recovery charge.

The package is optimized for PCB layout, heat transfer, driver/MOSFET control timing, and minimal switch node ringing when layout guidelines are followed. The paired gate driver and MOSFET combination enables higher efficiency at lower output voltages required by cutting edge CPU, GPU and DDR memory designs.

Operation of up to 1.5 MHz switching frequency enables high performance transient response, allowing miniaturization of output inductors, as well as input and output capacitors while maintaining industry leading efficiency.


Summary of Features

  • Integrated driver, active diode, control MOSFET Q1 and synchronous MOSFET Q2
  • On-chip MOSFET current sensing and reporting at 5 µA/A
  • Input voltage (VIN) range of 4.25 V to 16 V
  • Output current capability of 70 A
  • Enhanced Fault reporting and identification
  • Over temperature protection and thermal shutdown
  • Auto-replenishment on bootstrap capacitor
  • Compatible with 3.3 V tri-state PWM Input
  • DEEP SLEEP mode for power saving via EN= low (32 µA typ)
  • Small 5 mm x 6 mm x 0.9 mm PQFN package

Benefits

  • High efficiency
  • Industry best current sense accuracy
  • Enhance fault identification and reporting
  • Advanced protection features like high-side MOSFET short detection, over temp and thermal shutdown
  • Low quiescent for power saving via EN = low

Potential Applications

  • High frequency, low profile DC-DC converters
  • Voltage regulators for CPUs, GPUs and DDR memory arrays
  • Telecom controlled and uncontrolled

Applications

  • 48 V intermediate bus converter (IBC)
  • Edge computing
  • Industrial PC
  • Programmable logic controller (PLC)
  • Telecommunication infrastructure

Designers who used this product also designed with


  • BSC014N04LSI |
    N-Channel Power MOSFET
  • BSC032N04LS |
    N-Channel Power MOSFET
  • XDPE14284A-0000 |
    Digital Multiphase Controllers
  • IPB017N10N5LF |
    N-Channel Power MOSFET
  • IR3889MTRPBF |
    Integrated POL Voltage Regulators
  • BSS214N |
    Small signal/small power MOSFET
  • SLB 9670VQ2.0 |
    OPTIGA™ TPM - Trusted Platform Module
  • BSC014N04LSI |
    N-Channel Power MOSFET
  • BSC032N04LS |
    N-Channel Power MOSFET
  • XDPE14284A-0000 |
    Digital Multiphase Controllers
  • IPB017N10N5LF |
    N-Channel Power MOSFET
  • IR3889MTRPBF |
    Integrated POL Voltage Regulators
  • BSS214N |
    Small signal/small power MOSFET
  • SLB 9670VQ2.0 |
    OPTIGA™ TPM - Trusted Platform Module
  • BSC014N04LSI |
    N-Channel Power MOSFET

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Supplier's Site Datasheet

Technical Specifications

  Infineon Technologies AG
Product Category Power Supplies
Product Number TDA21570
Product Name DC-DC Converters, Integrated Smart Power Stages
Type DC-DC Converter
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