Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPW17N80C3 SPW17N80C3

Description
Manufacturer: Infineon Technologies Win Source Part Number: 088023-SPW17N80C3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 227W (Tc) Family Name: SPW17N80C3 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 17A (Tc) Gate-Source Threshold Voltage: 3.9V @ 1mA Max Gate Charge: 177nC @ 10V Max Input Capacitance: 2320pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 290 mOhm @ 11A, 10V Alternative Parts (Cross-Reference): APT17N80BC3G; APT17N80BC3; STW11NM80; Introduction Date: July 25, 2002 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 088023-SPW17N80C3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 227W (Tc) Family Name: SPW17N80C3 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 17A (Tc) Gate-Source Threshold Voltage: 3.9V @ 1mA Max Gate Charge: 177nC @ 10V Max Input Capacitance: 2320pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 290 mOhm @ 11A, 10V Alternative Parts (Cross-Reference): APT17N80BC3G; APT17N80BC3; STW11NM80; Introduction Date: July 25, 2002 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPW17N80C3 - 088023-SPW17N80C3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPW17N80C3
088023-SPW17N80C3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPW17N80C3 088023-SPW17N80C3
Manufacturer: Infineon Technologies Win Source Part Number: 088023-SPW17N80C3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 227W (Tc) Family Name: SPW17N80C3 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO247-3 Dimension: TO-247-3 Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 17A (Tc) Gate-Source Threshold Voltage: 3.9V @ 1mA Max Gate Charge: 177nC @ 10V Max Input Capacitance: 2320pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 290 mOhm @ 11A, 10V Alternative Parts (Cross-Reference): APT17N80BC3G; APT17N80BC3; STW11NM80; Introduction Date: July 25, 2002 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 088023-SPW17N80C3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 227W (Tc)
Family Name: SPW17N80C3
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO247-3
Dimension: TO-247-3
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 17A (Tc)
Gate-Source Threshold Voltage: 3.9V @ 1mA
Max Gate Charge: 177nC @ 10V
Max Input Capacitance: 2320pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 290 mOhm @ 11A, 10V
Alternative Parts (Cross-Reference): APT17N80BC3G; APT17N80BC3; STW11NM80;
Introduction Date: July 25, 2002
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
MOSFETs - 7528508 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
7528508
MOSFETs 7528508
MOSFET N-Channel 800V 17A CoolMOS TO247

MOSFET N-Channel 800V 17A CoolMOS TO247

Supplier's Site
MOSFETs - 7528508P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
7528508P
MOSFETs 7528508P
MOSFET N-Channel 800V 17A CoolMOS TO247

MOSFET N-Channel 800V 17A CoolMOS TO247

Supplier's Site
MOSFETs - 9114943 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
9114943
MOSFETs 9114943
MOSFET N-Channel 800V 17A CoolMOS TO247

MOSFET N-Channel 800V 17A CoolMOS TO247

Supplier's Site
Singapore, Singapore
800V 17A MOSFET Transistor
2088-SPW17N80C3
800V 17A MOSFET Transistor 2088-SPW17N80C3
MOSFETs N-Ch 800V 17A TO247-3 CoolMOS C3 Product overview: SPW17N80C3 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 17A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 17A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SPW17N80C3 can be used for catalog matching and distributor lookup.

MOSFETs N-Ch 800V 17A TO247-3 CoolMOS C3 Product overview: SPW17N80C3 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 17A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 17A, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SPW17N80C3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
MOSFET N-CH 800V 17A TO-247 - 376-SPW17N80C3 - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 800V 17A TO-247
376-SPW17N80C3
MOSFET N-CH 800V 17A TO-247 376-SPW17N80C3
MOSFET N-CH 800V 17A TO-247

MOSFET N-CH 800V 17A TO-247

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Ch 800V 17A TO247-3 CoolMOS C3

MOSFET N-Ch 800V 17A TO247-3 CoolMOS C3

Buy Now Datasheet
Transistors - SPW17N80C3 - ODG (Origin Data Global)
Shenzhen, China
Transistors
SPW17N80C3
Transistors SPW17N80C3
800V 17A 227W 290mΩ@10V,11A 3.9V@1mA 1 N-Channel TO-247AC-3 MOSFETs ROHS

800V 17A 227W 290mΩ@10V,11A 3.9V@1mA 1 N-Channel TO-247AC-3 MOSFETs ROHS

Supplier's Site
Transistor - 24728711 - Radwell International
Willingboro, NJ, United States
Transistor
24728711
Transistor 24728711
(PRICE/EA) N CHANNEL MOSFET, 800V, 17A, P-TO-247; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:17A; DRAIN SOURCE VOLTAGE VDS:800V; ON RE. FREE 2 YEAR RADWELL WARRANTY

(PRICE/EA) N CHANNEL MOSFET, 800V, 17A, P-TO-247; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:17A; DRAIN SOURCE VOLTAGE VDS:800V; ON RE. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site

Technical Specifications

  Win Source Electronics RS Components, Ltd. RS Components, Ltd. ERSAELECTRONICS PTE. LTD. Utmel Electronic Limited VAST STOCK CO., LIMITED ODG (Origin Data Global) Radwell International
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 088023-SPW17N80C3 7528508 7528508P 2088-SPW17N80C3 376-SPW17N80C3 SPW17N80C3 SPW17N80C3 24728711
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPW17N80C3 MOSFETs MOSFETs 800V 17A MOSFET Transistor MOSFET N-CH 800V 17A TO-247 MOSFET Transistors Transistor
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 800 volts
PD 227000 milliwatts 227 milliwatts 227000 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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