Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPU30N03S2-08 SPU30N03S2-08

Manufacturer: Infineon Technologies Win Source Part Number: 1101653-SPU30N03S2-0 8 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 125W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: P-TO251-3 Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 30A (Tc) Gate-Source Threshold Voltage: 4V @ 85μA Max Gate Charge: 47nC @ 10V Max Input Capacitance: 2170pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8.2 mOhm @ 30A, 10V Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Sufficient