Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPU09P06PL SPU09P06PL

Manufacturer: Infineon Technologies
Win Source Part Number: 1101650-SPU09P06PL
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 42W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO251-3
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 9.7A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 21nC @ 10V
Max Input Capacitance: 450pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 250 mOhm @ 6.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Limited

MOSFET P-CH 60V 9.7A TO251-3 Product overview: SPU09P06PL from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 9.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 9.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SPU09P06PL can be used for catalog matching and distributor lookup.

P-Channel 60V 9.7A (Tc) 42W (Tc) Through Hole P-TO251-3-1