Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPU04N60C3 SPU04N60C3

Description
Manufacturer: Infineon Technologies Win Source Part Number: 065978-SPU04N60C3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO251-3 Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 4.5A (Tc) Gate-Source Threshold Voltage: 3.9V @ 200μA Max Gate Charge: 25nC @ 10V Max Input Capacitance: 490pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 950 mOhm @ 2.8A, 10V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited
Request a Quote Datasheet
Description
Manufacturer: Infineon Technologies Win Source Part Number: 065978-SPU04N60C3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO251-3 Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 4.5A (Tc) Gate-Source Threshold Voltage: 3.9V @ 200μA Max Gate Charge: 25nC @ 10V Max Input Capacitance: 490pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 950 mOhm @ 2.8A, 10V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPU04N60C3 - 065978-SPU04N60C3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPU04N60C3
065978-SPU04N60C3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPU04N60C3 065978-SPU04N60C3
Manufacturer: Infineon Technologies Win Source Part Number: 065978-SPU04N60C3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 50W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO251-3 Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 4.5A (Tc) Gate-Source Threshold Voltage: 3.9V @ 200μA Max Gate Charge: 25nC @ 10V Max Input Capacitance: 490pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 950 mOhm @ 2.8A, 10V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited

Manufacturer: Infineon Technologies
Win Source Part Number: 065978-SPU04N60C3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 50W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO251-3
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 4.5A (Tc)
Gate-Source Threshold Voltage: 3.9V @ 200μA
Max Gate Charge: 25nC @ 10V
Max Input Capacitance: 490pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 950 mOhm @ 2.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Transistors - SPU04N60C3 - ODG (Origin Data Global)
Shenzhen, China
Transistors
SPU04N60C3
Transistors SPU04N60C3
TO-251-3 MOSFETs ROHS

TO-251-3 MOSFETs ROHS

Supplier's Site
Singapore
650V 4.5A MOSFET Transistor
285-SPU04N60C3
650V 4.5A MOSFET Transistor 285-SPU04N60C3
MOSFET N-CH 650V 4.5A TO-251 Product overview: SPU04N60C3 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 4.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 4.5A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-SPU04N60C3 can be used for catalog matching and distributor lookup.

MOSFET N-CH 650V 4.5A TO-251 Product overview: SPU04N60C3 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 4.5A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 4.5A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-SPU04N60C3 can be used for catalog matching and distributor lookup.

Supplier's Site
Transistor - 38342572 - Radwell International
Willingboro, NJ, United States
Transistor
38342572
Transistor 38342572
MOSFET, N, 600V, I-PAK; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:4.5A; DRAIN SOURCE VOLTAGE VDS:650V; ON RESISTANCE RDS(ON) :950MOHM. FREE 2 YEAR RADWELL WARRANTY

MOSFET, N, 600V, I-PAK; TRANSISTOR POLARITY:N CHANNEL; CONTINUOUS DRAIN CURRENT ID:4.5A; DRAIN SOURCE VOLTAGE VDS:650V; ON RESISTANCE RDS(ON) :950MOHM. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Ch 600V 4.5A IPAK-3 CoolMOS C3

MOSFET N-Ch 600V 4.5A IPAK-3 CoolMOS C3

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Radwell International VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 065978-SPU04N60C3 SPU04N60C3 285-SPU04N60C3 38342572 SPU04N60C3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPU04N60C3 Transistors 650V 4.5A MOSFET Transistor Transistor MOSFET
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 650 volts
PD 50000 milliwatts 50000 milliwatts
Unlock Full Specs
to access all available technical data

Similar Products

TRANSISTORS - Transistors (BJT) - Single - 2N5550TFR - 854974-2N5550TFR - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
40V 123A MOSFET Transistor - 278-AUIRFS8403 - ERSAELECTRONICS PTE. LTD.
Specs
Polarity N-Channel
MOSFET Operating Mode Enhancement
V(BR)DSS 40 volts
View Details
5 suppliers