MOSFET N-CH 600V 1.8A TO-251 Product overview: SPU02N60S5 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 1.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 1.8A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-SPU02N60S5 can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 042836-SPU02N60S5
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 25W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO251-3
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 1.8A (Tc)
Gate-Source Threshold Voltage: 5.5V @ 80μA
Max Gate Charge: 9.5nC @ 10V
Max Input Capacitance: 240pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3 Ohm @ 1.1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited
MOSFET N-Ch 600V 1.8A IPAK-3 CoolMOS S5
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | VAST STOCK CO., LIMITED | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 285-SPU02N60S5 | 042836-SPU02N60S5 | SPU02N60S5 |
| Product Name | 600V 1.8A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPU02N60S5 | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | |
| PD | 25000 milliwatts | 25000 milliwatts | |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |