Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPU02N60C3 SPU02N60C3

Description
Manufacturer: Infineon Technologies Win Source Part Number: 212038-SPU02N60C3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 25W (Tc) Family Name: SPU02N60C3 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO251-3 Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 1.8A (Tc) Gate-Source Threshold Voltage: 3.9V @ 80μA Max Gate Charge: 12.5nC @ 10V Max Input Capacitance: 200pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3 Ohm @ 1.1A, 10V Alternative Parts (Cross-Reference): STD2NB60-1; STD2NC60-1; STULED623; Introduction Date: November 20, 2002 ECCN: EAR99 Estimated EOL Date: 2019 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Sufficient
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPU02N60C3 - 212038-SPU02N60C3 - Win Source Electronics
    Win Source Electronics
  • Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, TO-251, IPAK-3 - 9152-SPU02N60C3 - Utmel Electronic Limited
    Utmel Electronic Limited
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 212038-SPU02N60C3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 25W (Tc) Family Name: SPU02N60C3 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO251-3 Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 1.8A (Tc) Gate-Source Threshold Voltage: 3.9V @ 80μA Max Gate Charge: 12.5nC @ 10V Max Input Capacitance: 200pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3 Ohm @ 1.1A, 10V Alternative Parts (Cross-Reference): STD2NB60-1; STD2NC60-1; STULED623; Introduction Date: November 20, 2002 ECCN: EAR99 Estimated EOL Date: 2019 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Sufficient
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPU02N60C3 - 212038-SPU02N60C3 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPU02N60C3
212038-SPU02N60C3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPU02N60C3 212038-SPU02N60C3
Manufacturer: Infineon Technologies Win Source Part Number: 212038-SPU02N60C3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 25W (Tc) Family Name: SPU02N60C3 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO251-3 Dimension: TO-251-3 Short Leads, IPak, TO-251AA Drain-Source Breakdown Voltage: 650V Continuous Drain Current at 25°C: 1.8A (Tc) Gate-Source Threshold Voltage: 3.9V @ 80μA Max Gate Charge: 12.5nC @ 10V Max Input Capacitance: 200pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 3 Ohm @ 1.1A, 10V Alternative Parts (Cross-Reference): STD2NB60-1; STD2NC60-1; STULED623; Introduction Date: November 20, 2002 ECCN: EAR99 Estimated EOL Date: 2019 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Sufficient

Manufacturer: Infineon Technologies
Win Source Part Number: 212038-SPU02N60C3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 25W (Tc)
Family Name: SPU02N60C3
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO251-3
Dimension: TO-251-3 Short Leads, IPak, TO-251AA
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 1.8A (Tc)
Gate-Source Threshold Voltage: 3.9V @ 80μA
Max Gate Charge: 12.5nC @ 10V
Max Input Capacitance: 200pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3 Ohm @ 1.1A, 10V
Alternative Parts (Cross-Reference): STD2NB60-1; STD2NC60-1; STULED623;
Introduction Date: November 20, 2002
ECCN: EAR99
Estimated EOL Date: 2019
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
650V 1.8A MOSFET Transistor
285-SPU02N60C3
650V 1.8A MOSFET Transistor 285-SPU02N60C3
MOSFET N-CH 650V 1.8A IPAK Product overview: SPU02N60C3 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 1.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 1.8A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-SPU02N60C3 can be used for catalog matching and distributor lookup.

MOSFET N-CH 650V 1.8A IPAK Product overview: SPU02N60C3 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 1.8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 1.8A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-SPU02N60C3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, TO-251, IPAK-3 - 9152-SPU02N60C3 - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, TO-251, IPAK-3
9152-SPU02N60C3
Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, TO-251, IPAK-3 9152-SPU02N60C3
Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, TO-251, IPAK-3

Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, TO-251, IPAK-3

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
SPU02N60C3
MOSFET SPU02N60C3
MOSFET N-Ch 600V 1.8A IPAK-3 CoolMOS C3

MOSFET N-Ch 600V 1.8A IPAK-3 CoolMOS C3

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Utmel Electronic Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 212038-SPU02N60C3 285-SPU02N60C3 9152-SPU02N60C3 SPU02N60C3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPU02N60C3 650V 1.8A MOSFET Transistor Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, TO-251, IPAK-3 MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 650 volts
PD 25000 milliwatts 25000 milliwatts
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