Manufacturer: Infineon Technologies
Win Source Part Number: 1101630-SPP80N03S2L-
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO220-3-1
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 220nC @ 10V
Max Input Capacitance: 8180pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 3.1 mOhm @ 80A, 10V
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Balance
Application Field: Used in Lighting, Industrial
N-Channel 30V 80A (Tc) 300W (Tc) Through Hole PG-TO220-3-1
MOSFET N-CH 30V 80A TO220-3
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 1101630-SPP80N03S2L-03 | SPP80N03S2L-03-ND | SPP80N03S2L-03 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPP80N03S2L-03 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | |
| V(BR)DSS | 30 volts | ||
| PD | 300000 milliwatts |
