Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPP77N06S2-12 SPP77N06S2-12

Description
Manufacturer: Infineon Technologies Win Source Part Number: 1101628-SPP77N06S2-1 2 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 158W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PG-TO220-3-1 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 4V @ 93μA Max Gate Charge: 60nC @ 10V Max Input Capacitance: 2350pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 12 mOhm @ 38A, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPP77N06S2-12 - 1101628-SPP77N06S2-12 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - SPP77N06S2-12-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SPP77N06S2-12 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Infineon Technologies Win Source Part Number: 1101628-SPP77N06S2-1 2 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 158W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PG-TO220-3-1 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 4V @ 93μA Max Gate Charge: 60nC @ 10V Max Input Capacitance: 2350pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 12 mOhm @ 38A, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

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Product
Description
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPP77N06S2-12 - 1101628-SPP77N06S2-12 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPP77N06S2-12
1101628-SPP77N06S2-12
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPP77N06S2-12 1101628-SPP77N06S2-12
Manufacturer: Infineon Technologies Win Source Part Number: 1101628-SPP77N06S2-1 2 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 158W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: PG-TO220-3-1 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 4V @ 93μA Max Gate Charge: 60nC @ 10V Max Input Capacitance: 2350pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 12 mOhm @ 38A, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1101628-SPP77N06S2-12
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 158W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO220-3-1
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 4V @ 93μA
Max Gate Charge: 60nC @ 10V
Max Input Capacitance: 2350pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 12 mOhm @ 38A, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - SPP77N06S2-12-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SPP77N06S2-12-ND
Single FETs, MOSFETs SPP77N06S2-12-ND
N-Channel 55V 80A (Tc) 158W (Tc) Through Hole PG-TO220-3-1

N-Channel 55V 80A (Tc) 158W (Tc) Through Hole PG-TO220-3-1

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SPP77N06S2-12 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SPP77N06S2-12
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SPP77N06S2-12
MOSFET N-CH 55V 80A TO220-3

MOSFET N-CH 55V 80A TO220-3

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1101628-SPP77N06S2-12 SPP77N06S2-12-ND SPP77N06S2-12
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPP77N06S2-12 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 55 volts
PD 158000 milliwatts
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