Infineon TRENCH 40<-<100V SPP18P06PHXKSA
Infineon TRENCH 40<-<100V SPP18P06PHXKSA
MOSFET P-CH 60V 18.7A TO220-3 Product overview: SPP18P06PHXKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 18.7A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 18.7A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SPP18P06PHXKSA1 can be used for catalog matching and distributor lookup.
Win Source Part Number: 998097-SPP18P06PHXKS
Category: Discrete Semiconductor Products>Transistors
Series: SIPMOS®
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 18.7A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13.2A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 81.1W (Ta)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: PG-TO220-3
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 175°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 61 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: SPP18P06P G-ND,IFEINFSPP18P06P
Base Product Number: SPP18P06
Drive Voltage (Max Rds On, Min Rds On): 10V
P-Channel 60V 18.7A (Ta) 81.1W (Ta) Through Hole PG-TO220-3
MOSFET P-CH 60V 18.7A TO220-3
MOSFET, AEC-Q101, P-CH, -60V, TO-220- 3; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:18.7A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.7V RoHS Compliant: Yes
MOSFET P-CH 60V 18.7A TO220-3
| RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2737552 | 278-SPP18P06PHXKSA1 | 998097-SPP18P06PHXKSA1 | SPP18P06PHXKSA1-ND | SPP18P06PHXKSA1 | 79X1965 | SPP18P06PHXKSA1 |
| Product Name | MOSFETs | 60V 18.7A TO220 MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Aec-Q101, P-Ch, -60V, To-2203; Channel Type Infineon | Single FETs, MOSFETs |
| Package Type | PG-TO252-3 | Tube | SOT3 | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-3; TO-220 | TO-220; TO-220-3 |
| MOSFET Operating Mode | Enhancement | ||||||
| V(BR)DSS | 60 volts | 60 volts | |||||
| PD | 81100 milliwatts | 81100 milliwatts | 81100 milliwatts | ||||
| TJ | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) | -55 to 175 C (-67 to 347 F) |
