MOSFET N-CH 650V 11A TO-220 Product overview: SPP11N65C3 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 650V, 11A, TO-220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 650V, 11A, TO-220, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-SPP11N65C3 can be used for catalog matching and distributor lookup.
Manufacturer: Infineon Technologies
Win Source Part Number: 065959-SPP11N65C3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 125W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO220-3-1
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 650V
Continuous Drain Current at 25°C: 11A (Tc)
Gate-Source Threshold Voltage: 3.9V @ 500μA
Max Gate Charge: 60nC @ 10V
Max Input Capacitance: 1200pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 380 mOhm @ 7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Limited
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 285-SPP11N65C3 | 065959-SPP11N65C3 | SPP11N65C3 |
| Product Name | 650V 11A TO-220 MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPP11N65C3 | Single FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | |
| PD | 125000 milliwatts | 125000 milliwatts | |
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |