Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPP10N10 SPP10N10

Manufacturer: Infineon Technologies
Win Source Part Number: 1101620-SPP10N10
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 50W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: PG-TO220-3-1
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 10.3A (Tc)
Gate-Source Threshold Voltage: 4V @ 21μA
Max Gate Charge: 19.4nC @ 10V
Max Input Capacitance: 426pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 170 mOhm @ 7.8A, 10V
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Sufficient

N-Channel 100V 10.3A (Tc) 50W (Tc) Through Hole PG-TO220-3-1

MOSFET N-CH 100V 10.3A TO220-3 Product overview: SPP10N10 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 100V, 10.3A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 100V, 10.3A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SPP10N10 can be used for catalog matching and distributor lookup.