Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPP04N80C3 SPP04N80C3

Description
Manufacturer: Infineon Technologies Win Source Part Number: 065951-SPP04N80C3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 63W (Tc) Family Name: SPP04N80C3 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 4A (Tc) Gate-Source Threshold Voltage: 3.9V @ 240μA Max Gate Charge: 31nC @ 10V Max Input Capacitance: 570pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.3 Ohm @ 2.5A, 10V Alternative Parts (Cross-Reference): TSM10N80CZ C0; TSM10N80CZ C0G; TSM8N80CZ C0G; Introduction Date: July 25, 2002 ECCN: EAR99 Country of Origin: Malaysia Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Balance Application Field: Used in Industrial, Power Management
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 065951-SPP04N80C3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 63W (Tc) Family Name: SPP04N80C3 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 4A (Tc) Gate-Source Threshold Voltage: 3.9V @ 240μA Max Gate Charge: 31nC @ 10V Max Input Capacitance: 570pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.3 Ohm @ 2.5A, 10V Alternative Parts (Cross-Reference): TSM10N80CZ C0; TSM10N80CZ C0G; TSM8N80CZ C0G; Introduction Date: July 25, 2002 ECCN: EAR99 Country of Origin: Malaysia Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Balance Application Field: Used in Industrial, Power Management
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPP04N80C3 - 065951-SPP04N80C3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPP04N80C3
065951-SPP04N80C3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPP04N80C3 065951-SPP04N80C3
Manufacturer: Infineon Technologies Win Source Part Number: 065951-SPP04N80C3 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 63W (Tc) Family Name: SPP04N80C3 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: PG-TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 800V Continuous Drain Current at 25°C: 4A (Tc) Gate-Source Threshold Voltage: 3.9V @ 240μA Max Gate Charge: 31nC @ 10V Max Input Capacitance: 570pF @ 100V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.3 Ohm @ 2.5A, 10V Alternative Parts (Cross-Reference): TSM10N80CZ C0; TSM10N80CZ C0G; TSM8N80CZ C0G; Introduction Date: July 25, 2002 ECCN: EAR99 Country of Origin: Malaysia Estimated EOL Date: 2024 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Balance Application Field: Used in Industrial, Power Management

Manufacturer: Infineon Technologies
Win Source Part Number: 065951-SPP04N80C3
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 63W (Tc)
Family Name: SPP04N80C3
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 4A (Tc)
Gate-Source Threshold Voltage: 3.9V @ 240μA
Max Gate Charge: 31nC @ 10V
Max Input Capacitance: 570pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.3 Ohm @ 2.5A, 10V
Alternative Parts (Cross-Reference): TSM10N80CZ C0; TSM10N80CZ C0G; TSM8N80CZ C0G;
Introduction Date: July 25, 2002
ECCN: EAR99
Country of Origin: Malaysia
Estimated EOL Date: 2024
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management

Buy Now Datasheet
Singapore, Singapore
800V 4A TO220 MOSFET Transistor
2088-SPP04N80C3
800V 4A TO220 MOSFET Transistor 2088-SPP04N80C3
MOSFETs N-Ch 800V 4A TO220-3 CoolMOS C3 Product overview: SPP04N80C3 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 4A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 4A, TO220, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SPP04N80C3 can be used for catalog matching and distributor lookup.

MOSFETs N-Ch 800V 4A TO220-3 CoolMOS C3 Product overview: SPP04N80C3 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 4A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 4A, TO220, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SPP04N80C3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
MOSFETs - 7533197P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
7533197P
MOSFETs 7533197P
MOSFET N-Channel 800V 4A CoolMOS TO220AB

MOSFET N-Channel 800V 4A CoolMOS TO220AB

Supplier's Site
MOSFETs - 7533197 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
7533197
MOSFETs 7533197
MOSFET N-Channel 800V 4A CoolMOS TO220AB

MOSFET N-Channel 800V 4A CoolMOS TO220AB

Supplier's Site
MOSFETs - 9110733 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
9110733
MOSFETs 9110733
MOSFET N-Channel 800V 4A CoolMOS TO220AB

MOSFET N-Channel 800V 4A CoolMOS TO220AB

Supplier's Site
Sheung Wan, Hong Kong
MOSFET N-Ch 800V 4A TO220-3 CoolMOS C3

MOSFET N-Ch 800V 4A TO220-3 CoolMOS C3

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. RS Components, Ltd. RS Components, Ltd. RS Components, Ltd. VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 065951-SPP04N80C3 2088-SPP04N80C3 7533197P 7533197 9110733 SPP04N80C3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPP04N80C3 800V 4A TO220 MOSFET Transistor MOSFETs MOSFETs MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel N-Channel N-Channel N-Channel
V(BR)DSS 800 volts
PD 63000 milliwatts 63 milliwatts
TJ -55 to 150 C (-67 to 302 F)
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