Infineon Technologies AG Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single SPP04N50C3HKSA1

Description
Win Source Part Number: 1278317-SPP04N50C3HK SA1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: CoolMOS™ Package: Tube Standard Package: 500 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 560 V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V Vgs(th) (Max) @ Id: 3.9V @ 200µA Power Dissipation (Max): 50W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: PG-TO220-3-1 Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 74 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: SP000014478,SPP04N50 C3IN,SPP04N50C3X,SPP 04N50C3XTIN,SPP04N50 C3XK,SPP04N50C3IN,SP P04N50C3,SPP04N50C3X TIN,SPP04N50C3INR Base Product Number: SPP04N Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V
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Description
Win Source Part Number: 1278317-SPP04N50C3HK SA1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: CoolMOS™ Package: Tube Standard Package: 500 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 560 V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V Vgs(th) (Max) @ Id: 3.9V @ 200µA Power Dissipation (Max): 50W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: PG-TO220-3-1 Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 74 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: SP000014478,SPP04N50 C3IN,SPP04N50C3X,SPP 04N50C3XTIN,SPP04N50 C3XK,SPP04N50C3IN,SP P04N50C3,SPP04N50C3X TIN,SPP04N50C3INR Base Product Number: SPP04N Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1278317-SPP04N50C3HKSA1 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1278317-SPP04N50C3HKSA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1278317-SPP04N50C3HKSA1
Win Source Part Number: 1278317-SPP04N50C3HK SA1 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: CoolMOS™ Package: Tube Standard Package: 500 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 560 V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V Vgs(th) (Max) @ Id: 3.9V @ 200µA Power Dissipation (Max): 50W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: PG-TO220-3-1 Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 74 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: Infineon Technologies Other Names: SP000014478,SPP04N50 C3IN,SPP04N50C3X,SPP 04N50C3XTIN,SPP04N50 C3XK,SPP04N50C3IN,SP P04N50C3,SPP04N50C3X TIN,SPP04N50C3INR Base Product Number: SPP04N Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1278317-SPP04N50C3HKSA1
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: CoolMOS™
Package: Tube
Standard Package: 500
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 560 V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 200µA
Power Dissipation (Max): 50W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: PG-TO220-3-1
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 74 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Infineon Technologies
Other Names: SP000014478,SPP04N50C3IN,SPP04N50C3X,SPP04N50C3XTIN,SPP04N50C3XK,SPP04N50C3IN,SPP04N50C3,SPP04N50C3XTIN,SPP04N50C3INR
Base Product Number: SPP04N
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Single FETs, MOSFETs - SPP04N50C3HKSA1-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SPP04N50C3HKSA1-ND
Single FETs, MOSFETs SPP04N50C3HKSA1-ND
N-Channel 560V 4.5A (Tc) 50W (Tc) Through Hole PG-TO220-3-1

N-Channel 560V 4.5A (Tc) 50W (Tc) Through Hole PG-TO220-3-1

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SPP04N50C3HKSA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SPP04N50C3HKSA1
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SPP04N50C3HKSA1
MOSFET N-CH 560V 4.5A TO220-3

MOSFET N-CH 560V 4.5A TO220-3

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Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors RF Transistors
Product Number 1278317-SPP04N50C3HKSA1 SPP04N50C3HKSA1-ND SPP04N50C3HKSA1
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
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