Infineon Technologies AG TRANSISTORS - Transistors - FETs, MOSFETs - RF - SPP02N80C3XKSA1 SPP02N80C3XKSA1

Manufacturer: Infineon Technologies
Win Source Part Number: 1000074-SPP02N80C3XKSA1
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 42W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: PG-TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 800V
Continuous Drain Current at 25°C: 2A (Tc)
Gate-Source Threshold Voltage: 3.9V @ 120μA
Max Gate Charge: 16nC @ 10V
Max Input Capacitance: 290pF @ 100V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.7 Ohm @ 1.2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance

N-Channel 800V 2A (Tc) 42W (Tc) Through Hole PG-TO220-3

MOSFET N-CH 800V 2A TO220-3 Product overview: SPP02N80C3XKSA1 from Infineon Technologies is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 2A, TO220. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 800V, 2A, TO220, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SPP02N80C3XKSA1 can be used for catalog matching and distributor lookup.